Sae Magnetics (h.k.) Limited

Other

Wei Xiong

Atsushi Iijima

Daisuke Iitsuka

Takao Noguchi

Ming Gao Yao

Kenjiro Hata

Kazushi Nishiyama

Fei He

Koyu Yamanoi

Bingjun Qu

Panjalak Rokrakthong

A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film, a lower piezoelectric-material protective-film being formed with alloy material, and an upper piezoelectric-material protective-film being formed with alloy material. The piezoelectric-material film includes a size larger than the upper electrode film, a riser end-surface and step-surface formed on a top-surface of the upper electrode film side. The riser end-surface connects smoothly with a peripheral end-surface of the upper electrode film and vertically intersects with the top-surface. The step-surface intersects vertically with the riser end-surface. The lower piezoelectric-material protective-film, and the upper piezoelectric-material protective-film are formed with alloy material including Fe as main ingredient and having Co and Mo, by Ion beam deposition.

Thin-film piezoelectric-material element, method of manufacturing the same, head gimbal assembly and hard disk drive

A piezoelectric device comprises a pressure chamber forming layer, a vibration plate disposed on and connected with the pressure chamber forming layer to form a pressure chamber, and a piezoelectric element disposed on the vibration plate and used for driving the vibration plate to move and thus changing a volume of the pressure chamber, wherein the piezoelectric element is disposed on the vibration plate in such a manner as to cover a portion of the pressure chamber, the piezoelectric element has two opposite ends respectively extending beyond an edge of the pressure chamber and covering the pressure chamber forming layer. The piezoelectric device of the present invention can efficiently actuate the vibration plate, eliminate undesired displacements of the vibration plate in the opposite direction at the edge of the chamber, and provide higher displacement sensitivity to driving voltage.

Thin-film piezoelectric actuator

A thin-film piezoelectric material substrate includes an insulator on Si substrate and a thin-film laminated part. The insulator on Si substrate has a substrate for deposition made of silicon and an insulating layer formed on a surface of the substrate for deposition. The thin-film laminated part is formed on a top surface of the insulating layer. The thin-film laminated part has a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film made of lead zirconate titanate, shown by general formula Pb(ZrTi)O, and formed on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film.

Thin-film piezoelectric material substrate, thin-film piezoelectric material element, head gimbal assembly, ink jet head and method of manufacturing the thin-film piezoelectric

A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film. The piezoelectric-material film includes a size larger than the upper electrode film, a riser end-surface and step-surface formed on a top-surface of the upper electrode film side. The riser end-surface connects smoothly with a peripheral end-surface of the upper electrode film and vertically intersects with the top-surface. The step-surface intersects vertically with the riser end-surface.

A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film, a lower piezoelectric-material protective-film being formed with alloy material, and an upper piezoelectric-material protective-film being formed with alloy material. The lower piezoelectric-material protective-film and the upper piezoelectric-material protective-film are formed respectively in the lower side of the lower electrode film and the upper side of the upper electrode film, of the laminated structure part, so as to sandwich the laminated structure part. The lower piezoelectric-material protective-film, and the upper piezoelectric-material protective-film are formed with alloy material including Fe as main ingredient and having Co and Mo, by Ion beam deposition.

Thin-film piezoelectric-material element with protective film composition and insulating film through hole exposing lower electrode film

A thin-film piezoelectric-material element includes a laminated structure part having a lower electrode film, a piezoelectric-material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric-material film, a lower piezoelectric-material protective-film being formed with alloy material, and an upper piezoelectric-material protective-film being formed with alloy material. The lower piezoelectric-material protective-film and the upper piezoelectric-material protective-film are formed respectively in the lower side of the lower electrode film and the upper side of the upper electrode film, of the laminated structure part, so as to sandwich the laminated structure part.

Head gimbal assembly thin-film piezoelectric-material element arranged in step part configuration with protective films

Thin-film piezoelectric material substrate, thin-film piezoelectric material element, head gimbal assembly, ink jet head and method of manufacturing the thin-film piezoelectric material element

A manufacturing method of an epitaxial thin film piezoelectric element includes: providing a substrate; forming a bottom electrode layer on the substrate by epitaxial growth process; forming a first piezoelectric layer that has c-axis orientation on the bottom electrode layer by epitaxial growth process; forming a second piezoelectric layer that has c-axis orientation and different phase structure from the first piezoelectric layer on the first piezoelectric layer by epitaxial growth process; and forming a top electrode layer on the second piezoelectric layer. The thin film piezoelectric element has good thermal stability, low temperature coefficient and high piezoelectric constant.

Thin film piezoelectric element and manufacturing method thereof

A thin-film piezoelectric material element includes a laminated structure part having a lower electrode film, a piezoelectric material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric material film. The thin-film piezoelectric material element includes a surface layer insulating film disposed on side surfaces of the laminated structure part, a first top surface of the upper electrode film and a second top surface of the lower electrode film, and has a first through hole formed on a first top disposed part and a second through hole formed on a second top disposed part. Further, the surface layer insulating film has an upper electrode pad being in directly contact with a first inside exposed surface and a lower electrode pad being in directly contact with a second inside exposed surface.

Thin-film piezoelectric material element, head gimbal assembly and hard disk drive

A thin-film piezoelectric material element includes a laminated structure part having a lower electrode film, a piezoelectric material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric material film. The thin-film piezoelectric material element includes a surface layer insulating film disposed on side surfaces of the laminated structure part and a top surface of the upper electrode film, and has a through hole formed on a top disposed part disposed on the top surface. The surface layer insulating film has a long-side disposed part disposed outside than the top disposed part, the long-side disposed part has a long-side width, along with the long-side direction, formed shorter than the through hole.

Disclosed are a magnetic sensor chip and a magnetic sensor. The magnetic sensor chip comprises a magnetic sensitive film (), and in the longitudinal direction of the magnetic sensitive film () are provided a number n of suppression units () capable of achieving the sectionalized suppression of a demagnetizing field, where the number n is an integer equal to or greater than 2. By means of the suppression units () arranged in the longitudinal direction of the magnetic sensitive film (), the magnetic sensitive film () to achieve a suppression of a demagnetizing field, so as to reduce or even eliminate the hysteresis of the magnetic sensitive film (), thus improving the sensitivity of the magnetic sensor chip.

Magnetic sensor chip and magnetic sensor

A thin film piezoelectric element of the present invention includes a substrate and a piezoelectric thin film stack formed on the substrate. The piezoelectric thin film stack includes a top electrode layer, a bottom electrode layer and a piezoelectric layer sandwiched between the top electrode layer and the bottom electrode layer, wherein the piezoelectric layer includes a first piezoelectric layer and a second piezoelectric layer whose compositions have different phase structures. The present invention can obtain high piezoelectric constants, enhanced coercive field strength and good thermal stability, thereby enabling larger applied field strength without depolarization and achieving a large stroke for its applied device.

Thin film piezoelectric element and manufacturing method thereof, micro-actuator, head gimbal assembly and disk drive unit with the same

A thin-film piezoelectric material element includes a lower electrode film, a piezoelectric material film, and an upper electrode film, the lower electrode film, the piezoelectric material film and the upper electrode film are laminated sequentially. An upper surface of the piezoelectric material film is a concavity and convexity surface having a convex part and a concave part, the convex part is a curved surface convexly projected, and the concave part is a curved surface concavely hollowed, the upper electrode film is formed on the concavity and convexity surface. The thin-film piezoelectric material element has a stress balancing film formed with a material having an internal stress capable of cancelling an element stress, the stress balancing film is formed on the upper electrode film.

Thin-film piezoelectric material element, method of manufacturing the same, head gimbal assembly, hard disk drive, ink jet head, variable focus lens and sensor

An electrical current sensor device includes a first printed circuit board assembly, a second printed circuit board assembly positioned opposite to the first printed circuit board assembly, and a holder holding the first and second printed circuit board assemblies and providing a passage to allow an electrical conductor to pass through. The first printed circuit board assembly includes a first sensing circuit having a first element pair that includes two magnetoresistive elements with a first pinning direction, the second printed circuit board assembly comprises a second sensing circuit with a second element pair that includes having two magnetoresistive elements with a second pinning direction that is opposite to the first pinning direction, and the first and second pinning directions are perpendicular to a current direction of a current passing through the electrical conductor, the first sensing circuit electrically connects with the second sensing circuit to form a Wheatstone bridge circuit.

Electrical current sensor device

A kind of gear is provided with shorter teeth, transition teeth and at least one longer tooth. The cross-section of the longer tooth is of a hawk beak shape, and the profile of the longer tooth is smoothly connected in series by a convex section, a tip section, a concave section, and a leading section The two sides of the longer tooth are each provided with a transition tooth which neighbors a shorter tooth on the opposite side of the longer tooth. The pair of engaging gears according to this invention have advantages of reducing the fluid leakage, canceling the inertia of the rotors, and minimizing the vibration and noise. This invention also discloses a fluid machine for conveying, compressing or expanding liquid or gaseous fluids, which includes a casing comprising a housing, an upper end cover and a lower end cover. At least one pair of engaging gears which includes one driving rotor according to this invention and one driven rotor according to this invention is accommodated in the housing. As a result, the leakage between the rotors can be reduced, therefore the compression ratio can be improved. In addition, over compression and under compression can be avoided in operation.

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Hong Kong, China

Wei Xiong