Yangtze Memory Technologies Co., Ltd.

Wuhan University

Wei Xie

Wenxi Zhou

Di Wang

Zhiliang Xia

Zongliang Huo

Kun Zhang

Linchun Wu

Bingguo Wang

Zhong Zhang

Liang Zhou

Tingting Zhao

Hui Zhao

Lin Jiang

Zhipeng Yu

Han Wang

Xumin Gao

Jianyang Zhu

Xiaoyue Pan

Tixian Tian

Lisheng Ren

Zhao Wang

A three-dimensional (3D) memory device includes a stack structure having interleaved conductive layers and dielectric layers, and a channel structure extending through the stack structure along a first direction. The channel structure is in contact with a source of the 3D memory device at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The memory film includes a first angled structure, and a first diameter of the memory film at the bottom portion below the first angled structure is smaller than a second diameter of the memory film at an upper portion above the first angled structure.

Three-dimensional memory devices and methods for forming the same

A three-dimensional (3D) memory device includes a stack structure having interleaved conductive layers and dielectric layers, and a channel structure extending through the stack structure along a first direction. The channel structure is in contact with a source of the 3D memory device at a bottom portion of the channel structure. The channel structure includes a semiconductor channel, and a memory film over the semiconductor channel. The memory film includes a tunneling layer over the semiconductor channel, a storage layer over the tunneling layer, and a blocking layer over the storage layer. A first thickness of the bottom portion of the channel structure is larger than a second thickness of a top portion of the channel structure.

In certain aspects, a method for forming a three-dimensional (3D) memory device is disclosed. A stack structure including interleaved first dielectric layers and second dielectric layers is formed. Channel structures extending through the first dielectric layers and the second dielectric layers in a first region of the stack structure are formed. All the second dielectric layers in the first region and parts of the second dielectric layers in a second region of the stack structure are replaced with conductive layers. Word line pick-up structures extending through the first dielectric layers and remainders of the second dielectric layers in the second region of the stack structure are formed at different depths, such that the word line pick-up structures are electrically connected to the conductive layers, respectively, in the second region of the stack structure.

Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a stack structure containing a core region and a staircase region, a channel structure extending through the stack structure in the core region, and a first support structure extending through the stack structure in the staircase region. The first support structure includes a first portion extending along a first direction and a second portion protruding from the first portion along a second direction perpendicular to the first direction.

A rotary joint, including: a hydraulic follow-up mechanism and a rotary transmission mechanism. The hydraulic follow-up mechanism includes a cylinder body, a valve sleeve, a valve core, a valve body, a left end cover and a right end cover. The rotary transmission mechanism includes a tray, a stabilizing ring, a follow-up disk, a torque transfer disk and a stable supporting wheel mechanism. The left end cover and the right end cover are arranged at the left and right ends of the cylinder body, respectively. The valve body is concentrically mounted in a cylindrical hollow chamber of the cylinder body. The output shaft at the right end of the valve body projects out of the right end cover. The right end of the valve core is provided with a valve core torque transfer shaft extending rightwards through the right end of the valve body.

Passive follow-up hydraulic rotary joint

Growing community of inventors

Wuhan, China

Wei Xie