Hon Hai Precision Industry Co., Ltd.

Hong-Fu Jin Precision Industry (Shenzhen) Co., Ltd.

Huawei Technologies Co., Limited

Fu Tai Hua Industry (Shenzhen) Co., Ltd.

Other

Tencent Technology (Shenzhen) Company Limited

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

Foxconn Technology Co., Ltd.

Fu Zhun Precision Industry (Shen Zhen) Co., Ltd.

Zhejiang Dahua Technology Co., Ltd.

Byd Company Limited

Mstar Semiconductor, Inc.

Tcl China Star Optoelectronics Technology Co., Ltd.

Scienbizip Consulting(shenzhen)co., Ltd.

Huawei Digital Power Technologies Co., Ltd.

Wei Wu

Xin Yang

Hai Gao

Lei Li

Yan Zhang

Tao Li

Hua Zhang

Wei Wei

Chao Xi Chen

Dong-Yun Li

Eddy Liu

Xi-Hang Li

Qiong Wang

Qingsong Chu

Xihua Huang

Jian-Ping Yu

Siyi Zhou

Huaheng Fan

Yuanfang Lv

Ziming Wang

Yuxiang Fan

Bin Wang

Jun Chen

Hao Li

Hui Zhang

Yong Yang

Bing Liu

Yun Yang

Lehong Niu

Chen Huang

Yue Wu

Tao Jiang

Rui Zhang

Pengfei Liang

Jun Feng

Jinhui Wang

Ding Li

Fangbai Li

Xiong Yang

Chieh-Yu Lee

Po-Lin Su

Yi Wang

Wei Yue

Jianxing Liao

Xingjian Shi

Caofei Heng

Zhen Lv

Junhua Wan

Zuoqian Jiang

Jun-Kang Fang

Mengguang Lin

Sheng Cao

Chengjun Li

Yan-Fang Yan

Chun-Kai Peng

Zhenkun Zhou

Yuqiong Xu

Taotao Yan

Chengshuai Liu

Boling Fan

Hongcheng Yin

Zhen-Ke Zhang

Ling Fang Pang

Xinhua Huang

Leibin Ni

Yuejia Wu

Ruoyang Du

Yi-Lung Chen

Hsu-Min Kuo

Shi-Li Zhang

Kerou Wang

Da-teng Li

Xiongcai Kuang

Zeke Zheng

Xue-Wei Wang

Xiaoyi Zeng

Guo-Yi Cui

Yan-Bo Nie

Rui Bin Wu

Tzu-Nung Chou

Fei Liao

Zhi-Qing Liu

Qing-Lei Pan

Yuan Gao

Chuang Ye

Yahui Lv

Fei Wu

Junzhi Yang

Chaoyang Guo

Jianlin Huang

Rui-qing Wang

Weilong Ouyang

Chao Chen

A unit includes a first transistor, a memristor, and a resistance modulation unit, where a first port of the resistance modulation unit and a first port of the memristor are coupled to a first electrode of the first transistor, and the first electrode of the first transistor is configured to control the first transistor to be coupled and decoupled. The resistance modulation unit is configured to adjust, based on a resistance of the memristor, a voltage applied to the first electrode of the first transistor. The resistance of the memristor indicates the first data stored by the memristor, and when a voltage indicating second data is input to a second electrode of the first transistor which is configured to output a computation result of the first data and the second data from a third electrode of the first transistor.

Changing resistance of modulation system with changing resistance of memristor to output computation result

A pixel structure and design method thereof, and a display panel are provided. The pixel structure includes a plurality of thin film transistors. Wherein, a channel width and a channel length of a second driving thin film transistor and a channel width a channel length of a voltage division thin film transistor satisfy a preset equation, and voltage division ratios of the second driving thin film transistor and the voltage division thin film transistor are allowed to be basically same as a preset voltage division ratio when the pixel structure is designed, so a problem of uneven brightness in current display panels is relieved.

Pixel structure and design method thereof, and display panel

A synchronization method includes obtaining a first timestamp difference of a packet on a target link. The first timestamp difference is a difference between a sending timestamp and a receiving timestamp of the packet at a first moment. The synchronization method further includes performing packet selection based on the first timestamp difference to obtain a second timestamp difference; obtaining a delay prediction value of the target link at the first moment, compensating for the second timestamp difference based on the delay prediction value to obtain a compensated timestamp difference; and performing time and/or clock synchronization based on the compensated timestamp difference. The second timestamp difference is compensated for based on the delay prediction value, that is, PDV noise introduced to the target link is compensated for. In this way, the PDV noise is reduced.

Synchronization method, apparatus, and device, and storage medium

The present disclosure provides an image device. The image device may include a camera lens, one or more stepper motors to drive the camera lens, one or more H-bridge circuits configured to control at least one of the one or more stepper motors, and a lens-identification circuit connected with the one or more H-bridge circuits, wherein the lens-identification circuit includes an impedance network of which an impedance value corresponds to a type of the camera lens.

Methods and systems for identifying camera lens

A clock oscillator, a clock oscillator production method and use method, and a chip including the clock oscillator are provided. The clock oscillator includes a resonator, a shock-absorbing material layer, and a base, and at least a part of the shock-absorbing material layer is located between the resonator and the base. In the clock oscillator, the shock-absorbing material layer is added between the resonator and the base, and the shock-absorbing material layer can effectively prevent a mechanical wave from being conducted between the base and the resonator, so that the resonator is protected from external vibration. This can ensure, when there is external vibration, that an output frequency of the resonator is not deteriorated and improve shock absorption performance of the clock oscillator.

Clock oscillator and clock oscillator production method

An operational amplifier includes a first amplifying unit, a second amplifying unit, a current source, a first compensation capacitor, and a second compensation capacitor. The first amplifying unit includes a first input transistor, a second input transistor, a third input transistor, and a fourth input transistor. The second amplifying unit includes a fifth input transistor, a sixth input transistor, a seventh input transistor, and an eighth input transistor. One end of the first compensation capacitor is coupled to a drain of the seventh input transistor, and the other end of the first compensation capacitor is coupled to a gate of the eighth input transistor. One end of the second compensation capacitor is coupled to a drain of the eighth input transistor, and the other end of the second compensation capacitor is coupled to a gate of the seventh input transistor.

Operational amplifier, radio frequency circuit, and electronic device

Embodiments of this disclosure provides a heartbeat information sending method and apparatus, a heartbeat information processing method and apparatus, and a node. One example method includes: determining at least one heartbeat receiving node in which at least two follower data blocks corresponding to at least two leader data blocks in a heartbeat sending node are located; and when the at least one heartbeat receiving node is a single heartbeat receiving node, sending heartbeat information of the heartbeat sending node to the single heartbeat receiving node, where the heartbeat information of the heartbeat sending node is obtained after respective heartbeat information of the at least two leader data blocks are combined.

Heartbeat information sending method and apparatus, and heartbeat sending node

An instrument interface method and device. Two capacitors, one capacitor has one end as input of the device, connected to live line of power output of a LISN, and has other end as output of the device, connected to one test port of an oscilloscope; the other capacitor has one end as input of the device, connected to neutral line of the power output of the LISN, and has other end as output of the device, connected to another test port of the oscilloscope; without changing the LISN design, existing LISN products can be used for conducted emission test with oscilloscope-based time-domain EMI measurement instruments by means of the method and device. Said two capacitors have a capacity of &#x3c;0.09 &#x3bc;F, which reduced the requirements of oscilloscope's A/D conversion, making low-cost oscilloscope can also be used for EMI testing.

Instrument interfacing method and device thereof

An intelligent robot control method is provided for an intelligent robot. The method includes obtaining a first position at which the intelligent robot is currently located and a target position to be reached, and determining a movement path from the first position to the target position. The movement path has a particular roadblock. The method also includes transmitting a removal request when the intelligent robot moves from the first position to a second position, and a distance between the second position and a third position at which the particular roadblock is located and that is to be reached reaches a target distance. The removal request is used for requesting a removal instruction to be transmitted to the particular roadblock, and the removal instruction is used for, based on a roadblock type of the particular roadblock, instructing to remove the particular roadblock before the intelligent robot arrives.

Intelligent robot control method, apparatus, and system, and storage medium

An apparatus for testing electronic components includes a base, a screw rod structure, a first sliding portion, a second sliding portion, a vacuum-based or similar adsorption structure, and a probe. The screw rod structure is fixedly connected to one side of the base. The first sliding portion is slidably positioned on the screw rod structure. The second sliding portion is slidably positioned on the first sliding portion. The adsorption structure is arranged on the second sliding portion. The adsorption structure gathers and holds an electronic component. The probe and the electronic component are arranged to correspond. The probe is electrically connected to a test device. The test device tests the electronic component through the probe.

Apparatus for testing electronic components

A transparent display device includes a flexible circuit board, a plurality of lamps, and a plurality of IC components. The flexible circuit board includes lamp fixing portions, a first bending portion, and second bending portions. The lamp fixing portions are spaced apart from each other and arranged in X-axis columns. Each lamp fixing portion extends as a strip along a Y axis. The X axis is perpendicular to the Y axis. Each lamp fixing portion includes an X-axis end edge and a Y-axis side edge. The first bending portion is bent from the end edge of each lamp fixing portion. Each second bending portion is bent from the side edge of one lamp fixing portion.

Trasprant display device

This application provides a method and a terminal for allocating a system resource to an application. The method includes: predicting, by a terminal based on a current status of the terminal, a target application to be used; reserving, by the terminal for the target application based on the prediction result, a system resource required for running the target application; and providing, by the terminal according to a resource allocation request of the target application, the reserved system resource for the target application to use.

Method and terminal for allocating system resource to application

An on-site heavy metal contaminated soil treatment apparatus, comprising a sampling system, a molding system, a heat processing system and a tail gas processing system disposed in sequence. The sampling system includes a bucket elevator and a planetary stirring device which are connected in sequence and are disposed on a mobile platform of the sampling system. The apparatus is easy to move and assemble, has a small floor area, and can be built on a target contaminated site, reducing transportation costs and the risk of secondary contamination. The entire process performed by the apparatus proceeds automatically, reducing labor costs. The planetary stirring sampling method and automatic brick blank extrusion molding process of the apparatus are applicable to various types of heavy metal contaminated soil providing high processing efficiency and good molding effect. Combined microwave heating and high-temperature steam heating provide rapid heating, small thermal inertia, and easy temperature control.

Site heavy metal contaminated soil treatment equipment and treatment method therefor

A BCE IGZO TFT device and a manufacturing method thereof include steps of providing a substrate, depositing a first metal layer on the substrate, wherein the first metal layer forms a gate and a first electrode layer by a patterning process, depositing a gate insulating layer on the substrate, the gate, and the first electrode layer, wherein the gate insulating layer is etched to remove a part of the gate insulating layer on a surface of the first electrode layer, depositing an active layer on the first electrode layer and the gate insulating layer, wherein the active layer and the first electrode layer are in direct contact, and depositing a second metal layer on the active layer, wherein the second metal layer forms a source, a drain, and a second electrode layer by a patterning process.

BCE IGZO TFT device and manufacturing method thereof

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Shenzhen, China

Wei Wu