Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Wei Liang

Kei-Wei Chen

Tang-Kuei Chang

Ji Cui

Liang-Guang Chen

Chi-Jen Liu

Li-Chieh Wu

Chun-Chieh Lin

Fu-Ming Huang

Ting-Kui Chang

Chi-Hsiang Shen

Ting-Hsun Chang

Hung Yen

Fu-ming Huang

Yee-Chia Yeo

Huicheng Chang

Liang-Yin Chen

Chun-Wei Hsu

Chia-Cheng Chen

Kao-Feng Liao

Peng-Chung Jangjian

Hui-chi Huang

A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one rheology modifier. The slurry includes at least one liquid carrier, at least one abrasives and at least one oxidizer. The rheology modifier is dispensed in the slurry. The polishing method includes using the slurry composition with the rheology modifier to polish a conductive layer.

Slurry composition and method for polishing and integrated circuit

A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.

Methods for chemical mechanical polishing and forming interconnect structure

A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.

Chemical mechanical polishing slurry composition, method for chemical mechanical polishing and method for forming connecting structure

A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.

The present disclosure describes a method for the planarization of ruthenium metal layers in conductive structures. The method includes forming a first conductive structure on a second conductive structure, where forming the first conductive structure includes forming openings in a dielectric layer disposed on the second conductive structure and depositing a ruthenium metal in the openings to overfill the openings. The formation of the first conductive structure includes doping the ruthenium metal and polishing the doped ruthenium metal to form the first conductive structure.

Ion implant process for defect elimination in metal layer planarization

The present disclosure provides a chemical mechanical polishing (CMP) slurry including a Lewis acid which is in dissolved form, and a chemical mechanical polishing (CMP) process using such CMP slurry. The present disclosure further provides an abrasive-free chemical mechanical polishing (CMP) slurry including a Lewis acid which is in dissolved form.

Chemical mechanical polishing slurry and chemical mechanical polishing process using the same

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Hsinchu, Taiwan

Wei-Wei Liang