Applied Materials, Inc.

Wei V Tang

Yixiong Yang

Srinivas Gandikota

Shih Chung Chen

Seshadri Ganguli

Paul F Ma

Dien-Yeh Wu

Mei Yin Chang

Yu Lei

Naomi Yoshida

Jacqueline S Wrench

Wenyu Zhang

David P Thompson

Jeffrey W Anthis

Xinyu Fu

Atif Noori

Xinliang Lu

Yong Wu

Lin Dong

Anqing Cui

Yongjing Lin

Guoqiang Jian

Chi-Chou Lin

Wenyi Liu

Muhammad M Rasheed

Yi Xu

Mario Dan Sanchez

Liqi Wu

Arkaprava Dan

Faruk Gungor

Karla M Bernal Ramos

Jing Zhou

Bo Wang

Sanjeev Baluja

Feng Quan Liu

Siddarth A Krishnan

Mandyam Sriram

Sang Ho Yu

Kai Wu

Muhannad Mustafa

Steven C H Hung

Tejas Ulavi

Vikash Banthia

Jianqiu Guo

Ludovic Godet

Abhijit Basu Mallick

Michael Patrick Chudzik

Pramit Manna

Rongjun Wang

Avgerinos V Gelatos

Rui Cheng

Susmit Singha Roy

Maitreyee Mahajani

Fei C Wang

Kurtis Leschkies

Xiaoxiong Yuan

Xin Liu

Yu Wen Chang

Kazuya Daito

Sundar Ramamurthy

Atashi Basu

Sang-Ho Yu

Kavita Shah

David Michael Thompson

Yifei Wang

Steven C Hung

William Kuang

Feiyue Ma

Xinming Zhang

Srividya Natarajan

Pulkit Agarwal

Drew Phillips

Jonathan Robert Bakke

Jia Ye

Leung Kway Lee

Kyoung-Ho Bu

Chen-Han Lin

Kaliappan Muthukumar

San H Yu

Yumin He

Chen Han Lin

Vikas Jangra

Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.

Thermal process chamber lid with backside pumping

Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an α-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

Liner for V-NAND word line stack

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200° C. by using an organic platinum group metal precursor.

Electronic device having an oxygen free platinum group metal film

Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.

High temperature chemical vapor deposition lid

A method for forming a metal nitride layer on a substrate includes exposing a substrate having features formed therein to a first deposition gas mixture including metal source material in a processing chamber to deposit metal source material in the features, supplying a first purge gas mixture into the processing chamber to remove excess metal source material and reaction byproducts from the processing chamber, exposing the substrate to a second deposition gas mixture including a nitride source compound in the processing chamber to form no more than one monolayer of metal nitride, supplying a second purge gas mixture into the processing chamber to remove excess nitride source compound and reaction byproducts from the processing chamber, and exposing the substrate to plasma using a microwave plasma source.

Method of tuning film properties of metal nitride using plasma

Substrate supports, substrate support assemblies and methods of using an arc generated between a first electrode and a second electrode to clean a support surface. The first electrode comprises a plurality of first branches which are interdigitated with a plurality of branches of the second electrode in a finger-joint like pattern creating a gap between the first electrode and the second electrode.

In-situ DC plasma for cleaning pedestal heater

Methods of depositing platinum group metal films of high purity, low resistivity, and good conformality are described. A platinum group metal film is formed in the absence of an oxidant. The platinum group metal film is selectively deposited on a conductive substrate at a temperature less than 200&#xb0; C. by using an organic platinum group metal precursor.

Oxygen free deposition of platinum group metal films

Methods of forming memory structures are discussed. Specifically, methods of forming 3D NAND devices are discussed. Some embodiments form memory structures with a metal nitride barrier layer, an &#x3b1;-tungsten layer, and a bulk metal material. The barrier layer comprises a TiXN or TaXN material, where X comprises a metal selected from one or more of aluminum (Al), silicon (Si), tungsten (W), lanthanum (La), yttrium (Yt), strontium (Sr), or magnesium (Mg).

Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.

Fluorine-doped nitride films for improved high-k reliability

Methods and apparatus for forming a semiconductor structure such as an NMOS gate electrode are described. Methods may include depositing a first capping layer having a first surface atop a first surface of a high-k dielectric layer; and depositing at least one metal layer having a first surface atop the first surface of the first capping layer, wherein the at least one metal layer includes titanium aluminum silicide material. Some methods include removing an oxide layer from the first surface of the first capping layer by contacting the first capping layer with metal chloride in an amount sufficient to remove an oxide layer. Some methods for depositing a titanium aluminum silicide material are performed by an atomic layer deposition process performed at a temperature of 350 to 400 degrees Celsius.

Methods and apparatus for n-type metal oxide semiconductor (NMOS) metal gate materials using atomic layer deposition (ALD) processes with metal based precursors

The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.

Tuning work function of p-metal work function films through vapor deposition

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Santa Clara, CA, United States of America

Wei V Tang