E Ink Holdings Inc.

Wei-Tsung Chen

Chuang-Chuang Tsai

Xue-Hung Tsai

Hsiao-Wen Zan

Ted-Hong Shinn

Po-Hsin Lin

Chih-Hsiang Yang

Wen-Chung Tang

Hung-Chuan Liu

Zong-Xuan Li

Chia-Chun Yeh

Henry Wang

Yu-Lin Wang

Cheng-Hang Hsu

Hsin Chiao

Ching-Fu Lin

Chun-Hung Liao

Pei-Lin Huang

Tzung-Wei Yu

Chao-Hsuan Chen

Wen-Yu Kuo

Hsing-Yi Wu

Pei-Chen Yu

Yu-Nung Mao

Guan-Ru Huang

Yi-Ting Chou

Chun-Chih Chen

Po-Yi Chang

Bing-Shu Wu

Yi-Chun Lai

An electronic device includes a substrate, a wiring structure, an oxide insulating layer and a nitride insulating layer. The wiring structure is disposed on the substrate and includes an outer metal layer and an inner metal layer. The outer metal layer contains no molybdenum. The inner metal layer disposed between the outer metal layer and the substrate contains molybdenum. The oxide insulating layer is disposed on the wiring structure and directly touches the outer metal layer. The nitride insulating layer is disposed on the oxide insulating layer, where the oxide insulating layer is positioned between the nitride insulating layer and the outer metal layer.

Electronic device and wiring structure thereof

An electronic device includes a substrate, a first wiring layer, an oxide insulating layer and a nitride insulating layer. The first wiring layer is disposed on the substrate and includes an outer metal layer. The outer metal layer contains at least 97 wt % molybdenum. The oxide insulating layer is disposed on the first wiring layer and touches the outer metal layer. The nitride insulating layer is disposed on the oxide insulating layer, where the thickness difference between the thickness of the oxide insulating layer and the thickness of the nitride insulating layer is greater than or equal to 250 nm.

Electronic device

An e-paper display apparatus including an e-paper display panel is provided. The e-paper display panel includes multiple pixel circuits arranged in an array. Each of the pixel circuits includes a transistor device. The transistor device is an oxide thin-film transistor. A set of signal waveforms for driving the pixel circuits to display image pages includes multiple frames. In a low panel frequency mode, the number of the frames is less than ten.

E-paper display apparatus and e-paper display panel

An e-paper display apparatus including an e-paper display panel is provided. The e-paper display panel includes a plurality of pixel circuits arranged in an array. Each of the pixel circuits includes a transistor device, a storage capacitor and a pixel capacitor. A data voltage is configured to drive the storage capacitor and the pixel capacitor, so as to drive the e-paper display panel to display image. The transistor device is an oxide thin-film transistor. An absolute value of the data voltage is greater than or equal to 20 voltages.

A sensitive device includes a plurality of first conductive nanostructures, a conductive layer and at least one electrode. The conductive layer covers the first conductive nanostructures. An intrinsic melting point of the conductive layer is higher than that of the first conductive nanostructures. At least one of the conductive layer and the first conductive nanostructures is sensitive to gas. The electrode is electrically connected to at least one of the first conductive nanostructures and the conductive layer.

Sensitive device and method of forming the same

A trace structure of a display panel including a first metal layer and a second metal layer is provided. The first metal layer is configured to transmit a first voltage. The second metal layer is disposed under the first metal layer and configured to transmit a second voltage. The first metal layer and the second metal layer form the trace structure on the display panel, such that the trace structure has a capacitor structure. The trace structure is configured to connect a power input and a panel driver circuit.

Trace structure of display panel

A proximity sensor includes a substrate, a light source, a finger electrode, an active layer, and a transparent electrode layer. The substrate has opposite top and bottom surfaces. The light source faces toward the bottom surface of the substrate. The finger electrode is located on the top surface of the substrate, and has finger portions and gaps between every two adjacent finger portions. The active layer covers the finger electrode, and is located in the gaps. The transparent electrode layer is located on the active layer. When the light source emits light, the light through the gaps sequentially passes through the active layer and the transparent electrode layer onto a reflective surface. The light is reflected by the reflective surface to form reflected light, and the reflected light passes through the transparent electrode layer and is received by the active layer.

Proximity sensor and operation method thereof

A driving substrate includes a substrate, at least one active device, a resistor, a first passivation layer and a second passivation layer. The active device including an oxide semiconductor layer and the resistor coupled to the active device are disposed on the substrate. The first passivation layer covers the active device, wherein a portion of the first passivation layer directly contacts to the oxide semiconductor layer such that the oxide semiconductor layer has a first conductivity. The second passivation layer covers the first passivation layer and the resistor, wherein a portion of the second passivation layer directly contacts to the resistor such that the resistor has a second conductivity. The first conductivity is different from the second conductivity.

Driving substrate and display apparatus

A memory structure includes a substrate, a gate electrode, a first isolation layer, a thin metal layer, indium gallium zinc oxide (IGZO) particles, a second isolation layer, an IGZO channel layer, and a source/drain electrode. The gate electrode is located on the substrate. The first isolation layer is located on the gate electrode. The thin metal layer is located on the first isolation layer, and has metal particles. The IGZO particles are located on the metal particles. The second isolation layer is located on the IGZO particles. The IGZO channel layer is located on the second isolation layer. The source/drain electrode is located on the IGZO channel layer.

Memory structure and manufacturing method thereof

A sensing element includes a conductive substrate, a zinc oxide seed layer, a plurality of zinc oxide nanorods, a film with an electrical double layer, and an organic sensing layer. The zinc oxide seed layer is located on the conductive substrate. The zinc oxide nanorods extend from the zinc oxide seed layer. The film with the electrical double layer covers the zinc oxide nanorods. The organic sensing layer is located on the film with the electrical double layer.

Sensing element

A display device and a display driving circuit with electromagnetic interference suppression capability are provided. The display device includes a substrate, an active matrix, a display driver and a thin-film transistor (TFT) conditioning circuit. The active matrix disposed on the substrate includes multiple data lines, multiple gate lines and multiple pixels. The data lines intersect with the gate lines. The pixels are coupled to intersections of the data lines and the gate lines. The display driver disposed on the substrate generates signals for driving the data lines and/or the gate lines in response to a conditioned serial data clock. The TFT conditioning circuit disposed on the substrate is coupled to the display driver. The TFT conditioning circuit includes one or more TFTs, and attenuates an amplitude of a serial data clock in response to a predetermined gate bias to provide the conditioned serial data clock to the display driver.

Display device and display driving circuit with electromagnetic interference suppression capability

A transistor including a substrate, a source, a drain, an active portion, a fin-shaped gate, and an insulation layer is provided. The source is located on the substrate. The drain is located on the substrate. The active portion connects the source and the drain. The fin-shaped gate wraps the active portion. A first portion of the insulation layer separates the fin-shaped gate from the active portion, a second portion of the insulation layer separates the fin-shaped gate from the substrate, a third portion of the insulation layer separates the fin-shaped gate from the source and from the drain, and a fourth portion of the insulation layer is located on a surface of the fin-shaped gate facing away from the active portion. Here, the insulation layer is integrally formed.

Transistor

A method of manufacturing a transistor, includes: (i) forming a metal-oxide semiconductor layer over a substrate; (ii) forming a source electrode and a drain electrode on different sides of the metal-oxide semiconductor layer; (iii) forming a dielectric layer over the source electrode, the drain electrode, and the metal-oxide semiconductor layer; (iv) forming a hydrogen-containing insulating layer over the dielectric layer, in which the hydrogen-containing insulating layer has an aperture exposing a surface of the dielectric layer, and the aperture is overlapped with the metal-oxide semiconductor layer when viewed in a direction perpendicular to the surface; (v) increasing a hydrogen concentration of a portion of the metal-oxide semiconductor layer by treating the hydrogen-containing insulating layer so to form a source region and a drain region; and (vi) forming a gate electrode in the aperture.

Transistor and method of manufacturing the same

A display apparatus is provided. Conducting states of switches in a pixel are switched to change charges stored in electrical energy storage cells that are connected to the switches, so as to provide a multi-stage driving voltage to a pixel electrode without increasing the manufacturing cost and circuit area of the display apparatus.

Display apparatus

A display apparatus including a display panel and a driver circuit is provided. The display panel includes a display region and a non-display region. The non-display region includes a plurality of dummy pixels connected to one another. The driver circuit provides gate driving voltages and a test data voltage, so as to make the dummy pixels connected to one another generate a charging rate test signal in response to the test data voltage.

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Hsinchu, Taiwan

Wei-Tsung Chen