Taiwan Semiconductor Manufacturing Comp. Ltd.

Au Optronics Corporation

Other

J-metrics Technology Co., Ltd.

Asustek Computer Inc.

Lite-on Technology Corporation

National Chung Hsing University

Top Victory Investments Limited

Hon Hai Precision Industry Co., Ltd.

Hong-fu Jin Precision Industry (shenzhen) Co., Ltd.

Lite-on Electronics (guangzhou) Limited

Mosel Vitelic Corporation

Wei-Ting Lin

Yu-Chih Liu

Chin-Liang Chen

Kuan-Lin Ho

Shih-Yen Lin

Jing Ruei Lu

Kai-Chiang Wu

Chuei-Tang Wang

Chun-Lin Lu

Yen-Ping Wang

Ching-Feng Yang

Vincent Chen

Shou Zen Chang

Chen-Hua Douglas Yu

Jason Shen

Yung-Chow Peng

Ming-Kai Liu

Chien-Wen Chen

Mu-Jen Huang

Sao-Ling Chiu

Tsung-Hsin Yu

Tzu-Chun Tang

Jiun-Jye Chang

Ming-Chung Sung

Chien-Kuo Chang

Chih Chi Hsiao

Hsien-Wei Chen

Chun-Cheng Lin

Ray-Hua Horng

Chien-Hsiun Lee

Po-Lun Chen

Dong-Sing Wuu

Chang-Chia Huang

Chun-Cheng Cheng

Shih-Hao Ke

Min-Che Huang

Shu-Hui Chou

Shih-Chun Kuo

Yung-Shin Liou

Ming-Chin Hung

Chung-Shi Liu

Shang-Yun Hou

Ming-Chih Yew

Tsung-Ding Wang

Tsung-Shu Lin

Hsin-Yu Pan

Shou-Zen Chang

Po-Tsun Liu

Han-Ping D Shieh

An-Thung Cho

Li-Feng Teng

Wen-Yi Lin

Chun-Lung Ho

Ping-Kang Huang

Chen-Chih Fan

Hai-Ming Chen

Chih-Tai Chen

Chun-Sheng Chen

Bor-Rung Su

Wei-Lung Liao

Chun-Hao Tu

Kuo-Chung Chiu

Yi-Teh Chou

Hsiao-Kai Li

Wen-Chieh Tseng

Chia-Hsiang Chen

Wei-Chi Yen

Tsung-Han Tsai

Tien-Hao Chang

Shuo-Hsiu Chang

Wei-Min Tsao

Shuo-Yang Sun

Ting-Yu Chen

Han-Ju Chiang

Ping-Chuan Tsai

Wan-Chen Huang

Shuan-Yi Chu

Al-Guo Cheng

Ko-Yi Lee

Dean Wang

Jing-Hu Song

Fu-Hai Li

Chun-Ching Hsiao

Tsung-Yu Hou

Chia-Hsin Yang

Chi-Kang Chiang

Ru-Me Na Jiang

A method of manufacturing a semiconductor device includes providing a semiconductor die and surrounding a sidewall of the semiconductor die with a dielectric material. The method further includes forming a post passivation interconnect (PPI) over the semiconductor die and electrically coupling the PPI with the semiconductor die. The method further includes molding the semiconductor die and the PPI into an integrated semiconductor package. The method further includes covering at least a portion of an outer surface of the integrated semiconductor package with a conductive layer, wherein the conductive layer is conformal to the morphology of the portion of the outer surface. Moreover, the method further includes forming a conductive path inside the integrated semiconductor package electrically coupled to the conductive layer and a ground terminal of the integrated semiconductor package.

Manufacturing method of a semiconductor device

A lid attach process includes dipping a periphery of a lid in a dipping tank of adhesive material such that the adhesive material attaches to the periphery of the lid. The lid attach process further includes positioning the lid over a die attached to a substrate using a lid carrier, wherein the periphery of the lid is aligned with a periphery of the lid carrier. The lid attach process further includes attaching the lid to the substrate with the adhesive material forming an interface with the substrate. The lid attach process further includes contacting a thermal interface material (TIM) on the die with the lid.

Lid attach process and dispenser head

A protection circuit including an auxiliary winding, a rectifier unit, the filter unit, a voltage divider unit and a controller is provided. The auxiliary winding is configured to induce an AC voltage. The rectifier unit is coupled to the auxiliary winding and configured to rectify the AC voltage into a DC voltage. The filter unit is coupled to the rectifier unit and configured to filter the DC voltage into a DC filter voltage. The voltage divider unit is coupled to the rectifier unit and the filter unit to transmit the DC filter voltage. The controller is coupled to the voltage divider unit and configured to detect a partial voltage of the DC filter voltage and detect whether to activate a protection mechanism according to the partial voltage.

Electronic device, protection circuit and protection method using the same

A package structure includes a semiconductor device, a circuit substrate and a heat dissipating lid. The semiconductor device includes a semiconductor die. The circuit substrate is bonded to and electrically coupled to the semiconductor device. The heat dissipating lid is bonded to the circuit substrate and thermally coupled to the semiconductor device, where the semiconductor device is located in a space confined by the heat dissipating lid and the circuit substrate. The heat dissipating lid includes a cover portion and a flange portion bonded to a periphery of the cover portion. The cover portion has a first surface and a second surface opposite to the first surface, where the cover portion includes a recess therein, the recess has an opening at the second surface, and a thickness of the recess is less than a thickness of the cover portion, where the recess is part of the space.

Package structure and method of manufacturing the same

Embodiments relate to packages and methods of forming packages. A package includes a package substrate, a first device die, first electrical connectors, an encapsulant, a redistribution structure, and a second device die. The first device die is attached to a side of the package substrate, and the first electrical connectors are mechanically and electrically coupled to the side of the package substrate. The encapsulant at least laterally encapsulates the first electrical connectors and the first device die. The redistribution structure is on the encapsulant and the first electrical connectors. The redistribution structure is directly coupled to the first electrical connectors. The first device die is disposed between the redistribution structure and the package substrate. The second device die is attached to the redistribution structure by second electrical connectors, and the second electrical connectors are directly coupled to the redistribution structure.

Package-on-package with redistribution structure

A semiconductor device includes a semiconductor die having an insulative layer and a conductive feature in the insulative layer, and a shield in contact with a lateral surface of the conductive feature. In some embodiments, the lateral surface of the conductive feature is aligned with an edge of the insulating material.

Semiconductor device

A semiconductor substrate includes a substrate, a first metal oxide semiconductor layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, and a second metal oxide semiconductor layer. The first transistor includes a first metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a first gate of the first conductive layer, a first source of the second conductive layer, and a first drain of the second conductive layer. The second transistor includes a second metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a second gate of the first conductive layer, a second source of the second conductive layer, a second drain of the second conductive layer, and a third metal oxide semiconductor pattern of the second metal oxide semiconductor layer.

Semiconductor substrate

A MOSFET includes a substrate, a trench, a bottom oxide, a shield poly, two gate polys and an inter-poly oxide. The trench is formed on the substrate. The bottom oxide is formed on the trench. The shield poly is formed on the trench, and a part of the bottom oxide is separated by the shield poly. The two gate polys are formed on the bottom oxide. The inter-poly oxide is formed between the two gate polys. The shield poly is staggered from at least one of the two gate polys in a horizontal direction and a vertical direction. Therefore, the capacitance between a source electrode and a gate electrode is effectively reduced, and the delay time during switching is shorten and the energy loss is reduced at the same time.

MOSFET and manufacturing method thereof

A linear guide apparatus may include a guide rail, a carriage block, at least two recirculating tubes, and two end covers. The carriage block has an axial sliding channel formed at a middle portion of a bottom surface thereof, and the carriage block is slidably coupled on the guide rail through the sliding channel. Each of two sides of the sliding channel has at least a sliding groove formed between the carriage block and guide rail. Each sliding groove comprises a plurality of rolling balls installed therein so as to enable the carriage block to slide forward and backward on the guide rail. Each of the sliding grooves is cooperated with a recirculating channel axially penetrating through the carriage block. Each of the recirculating tubes comprises a plurality of spiral threads to enable the rolling balls to have lateral roll at a specific angle when passing therethrough.

Linear guide apparatus

Disclosed herein is a device having a shaped seal ring comprising a workpiece, the workpiece comprising at least one dielectric layer disposed on a first side of a substrate, a seal ring disposed in the at least one dielectric layer, and at least one groove in the seal ring. A lid is disposed over the workpiece, the workpiece extending into a recess in the lid and a first thermal interface material (TIM) contacts the seal ring and the lid, with the first TIM extending into the at least one groove. The workpiece is mounted to the package carrier. A die is mounted over a first side of workpiece and disposed in the recess. A first underfill a disposed under the die and a second underfill is disposed between the workpiece and the package carrier. The first TIM is disposed between the first underfill and the second underfill.

System and method for bonding package lid

A method and structure for packaging a semiconductor device are provided. In an embodiment a first substrate is bonded to a second substrate, which is bonded to a third substrate. A thermal interface material is placed on the second substrate prior to application of an underfill material. A ring can be placed on the thermal interface material, and an underfill material is dispensed between the second substrate and the third substrate. By placing the thermal interface material and ring prior to the underfill material, the underfill material cannot interfere with the interface between the thermal interface material and the second substrate, and the thermal interface material and ring can act as a physical barrier to the underfill material, thereby preventing overflow.

Semiconductor packaging structure and process

A semiconductor device includes a semiconductor die. A dielectric material surrounds the semiconductor die to form an integrated semiconductor package. There is a contact coupling to the integrated semiconductor package and configured as a ground terminal for the semiconductor package. The semiconductor device further has an EMI (Electric Magnetic Interference) shield substantially enclosing the integrated semiconductor package, wherein the EMI shield is coupled with the contact through a path disposed in the integrated semiconductor package.

Semiconductor device and manufacturing method thereof

A lid attach process includes providing a substrate and a die attached to the substrate, providing a lid and dipping a periphery of the lid in a dipping tank of adhesive material such that the adhesive material attaches to the periphery of the lid, and positioning the lid over the die and placing the lid on a top of the substrate with the adhesive material being adapted to interface with a periphery of the substrate.

Lid attach processes for semiconductor packages

A spindle with intelligent auto-detection system may comprise a spindle, a shell configured for covering the spindle, a first conducting ring, a second conducting ring and at least a sensor. The spindle has a connecting section and a working section, and the connecting section is configured for connecting a power unit of a processing machine. Moreover, a tool is secured on the working section, and the sensor is positioned in an inner tube of the spindle. The first conducting ring and the second conducting ring in a recess of the shell are respectively electrically connected to the sensor and an analytical instrument. When the spindle is spinning, the sensor is adapted to measure various data of statuses of the spindle and the processing machine, and the obtained data is configured to be sent to the analytical instrument, thereby achieving monitoring effect.

Spindle with intelligent auto-detection system

Methods of forming package-on-package structures

Growing community of inventors

Taipei, Taiwan

Wei-Ting Lin