Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei Te Chiang

Chii-Horng Li

Li-Li Su

Chien-I Kuo

Wei Hao Lu

Tzu-Ching Lin

Yi-Fang Pai

Chia-Ling Chan

Shao-Fu Fu

An embodiment is a method including forming a raised portion of a substrate, forming fins on the raised portion of the substrate, forming an isolation region surrounding the fins, a first portion of the isolation region being on a top surface of the raised portion of the substrate between adjacent fins, forming a gate structure over the fins, and forming source/drain regions on opposing sides of the gate structure, wherein forming the source/drain regions includes epitaxially growing a first epitaxial layer on the fin adjacent the gate structure, etching back the first epitaxial layer, epitaxially growing a second epitaxial layer on the etched first epitaxial layer, and etching back the second epitaxial layer, the etched second epitaxial layer having a non-faceted top surface, the etched first epitaxial layer and the etched second epitaxial layer forming source/drain regions.

FETS and methods of forming FETS

FETs and methods of forming FETs

FinFET having a non-faceted top surface portion for a source/drain region

The present disclosure relates generally to an epitaxy scheme for forming source/drain regions in a semiconductor device, such as an n-channel device. In an example, a method of manufacturing a semiconductor device includes forming an active area on a substrate. The active area includes a source/drain region. The formation of the source/drain region includes forming a barrier region along a bottom surface and side surface of a recess in the active area. The barrier region includes arsenic having a first dopant concentration. The formation of the source/drain region further includes forming an epitaxial material on the barrier region in the recess. The epitaxial material includes phosphorous having a second dopant concentration.

Semiconductor device source/drain region with arsenic-containing barrier region

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Hsinchu, Taiwan

Wei Te Chiang