Seagate Technology Incorporated

Wei Tan

Dimitar Velikov Dimitrov

Haiwen Xi

Yong Lu

Yuankai Zheng

Yiran Chen

Xiaobin Wang

Nurul Amin

Ming Sun

Harry Hongyue Liu

Chulmin Jung

Brian Lee

Youngpil Kim

Zhe Shen

Dong Lin

Insik Jim

Venu Vaithyanathan

Luo Yong

A magnetic element may be generally configured as a data writer constructed at least with a write pole within a box shield that consists of first and second side shields and first and second vertical shields. The write pole may be separated from the box shield by a multi-layer gap structure that consists of at least two gap layers of dissimilar materials.

Write pole box shield

A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element.

Non-volatile memory cell with programmable unipolar switching element

A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.

Non-volatile memory cell with precessional switching

Growing community of inventors

Bloomington, MN, United States of America

Wei Tan