Chi Mei Corporation

Wei-Ta Chen

Keng-Chu Lin

Jen-Shrong Uen

Yuan-Ren Juang

Yao-Tsung Chuang

Szu-Chun Yu

A luminescent material includes a particle of an irregular shape. The particle of an irregular shape includes a core of an irregular shape and quantum dots. The quantum dots distribute on the core.

Luminescent material and electronic device having a display function using the same

The present disclosure provides a quantum dot and a manufacturing method for the same, and a luminescent material, a light-emitting element and a display device applying the quantum dot. The quantum dot includes a core and a shell layer. The core is at least one selected from the group consisting of a XII-XV group compound semiconductor nano-crystal, a XII-XVI group compound semiconductor nano-crystal, a XIII-XV group compound semiconductor nano-crystal and a XIII-XVI group compound semiconductor nano-crystal. The core contains a cadmium element and a selenium element. The shell layer contains a zinc element and a sulfur element. The shell layer encloses the core.

Quantum dot and manufacturing method for the same and application using the same

A luminescent material, a light emitting device, and a display device are disclosed. The luminescent material includes particles and a phosphor. The particles include quantum dots and have an average diameter of 0.06 &#x3bc;m to 30 &#x3bc;m.

Luminescent material and light emitting device and display device using the same

A manufacturing method of a quantum dot, a light-emitting material, a light-emitting device, and a display apparatus are provided. The manufacturing method of a quantum dot includes the following steps. A first solution including at least one element selected from the group consisting of an element in Group XII and an element in Group XIII is provided. A second solution including at least one element selected from the group consisting of an element in Group XV and an element in Group XVI is provided. The first solution and the second solution are mixed. A thermal treatment is performed on the mixed solution. A range of the heating rate of the thermal treatment is 2&#xb0; C./min to 10&#xb0; C./min.

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Tainan, Taiwan

Wei-Ta Chen