Sharp Kabushiki Kaisha Corporation

Wei-Sin Tan

Valerie Berryman-Bousquet

Jonathan Heffernan

Tong Zhang

Jennifer Mary Barnes

Alistair Paul Curd

A light emitting diode (LED) is provided along with a method of making the same. The LED includes a conductive n-type region formed on a substrate; an active region formed on the n-type region; a first p-type region formed on the active region; a plurality of nanostructures formed on the first p-type region to carry out light extraction from the active region, the nanostructures having a diameter less than 500 nm; a second p-type region regrown on the first p-type region to form a non-planar surface in combination with the nanostructures; and a p-type electrode formed on the non-planar surface.

Light emitting diode with nanostructures and method of making the same

A light emitting diode device which includes at least one light emitting diode, a heat-sink chassis having a surface upon which the at least one light emitting diode is mounted, and a waveguide having one end coupled to the at least one light emitting diode for receiving light therefrom. The waveguide has another end which includes a light extraction and redistribution region, and the waveguide is configured to guide light received from the at least one light emitting diode away from the heat-sink chassis and towards the light extraction and redistribution region. The light extraction and redistribution region is configured to extract and redistribute the light from the waveguide.

Light emitting diode device

A laser diode structure that includes two different insulator layers, one to maintain good optical confinement, typically located at the sides of the laser ridge, and another to improve the heat dissipation properties, typically located on the etched surfaces away from the ridge.

Growing community of inventors

Oxford, United Kingdom

Wei-Sin Tan