Aledia

Wei Sin Tan

Philippe Gilet

Pierre Tchoulfian

Vincent Beix

Zine Bouhamri

Pamela Rueda Fonseca

Zheng-Sung Chio

Eric Pourquier

A method of forming a dielectric collar for semiconductor wires includes providing a layers stack and a semiconductor wires (SW) layer on top of the stack, forming a base layer at a lower part of the SW and a capping layer at an upper part of the SW, the base layer parallel to the basal plane and including a dielectric material surrounding the lower part of the SW, and the capping layer along a contour of the SW and including a dielectric material surrounding the upper part of the SW, the base and capping layers having thicknesses e1 and e2 with e1>2.e2, performing anisotropic etching along the direction normal to the basal plane to remove the dielectric material at a top part of the SW and leaving the dielectric material at least in the lower part of the SW.

Method of forming a dielectric collar for semiconductor wires

An optoelectronic device including light-emitting components, each light-emitting component being adapted to emit a first radiation at a first wavelength, and photoluminescent blocks, each photoluminescent block facing at least one light-emitting component and comprising a single quantum well or multiple quantum wells, photoluminescent blocks being divided into first photoluminescent blocks adapted to convert by optical pumping the first radiation into a second radiation at a second wavelength, second photoluminescent blocks adapted to convert by optical pumping the first radiation into a third radiation at a third wavelength and third photoluminescent blocks adapted to convert by optical pumping the first radiation into a fourth radiation at a fourth wavelength.

Optoelectronic device with light-emitting diodes

An optoelectronic device including: a first circuit including a substrate having first and second opposite faces, the first circuit having display pixels, each display pixel having, on the side of the first face, a first light-emitting diode having a first active region adapted to emit a first radiation and, extending from the second face, a second light-emitting diode having a second active region adapted to emit a second radiation, the surface area, viewed from a direction orthogonal to the first face, of the first active region being at least twice as big as the surface area, viewed from the direction, of the second active region; and a second circuit bonded to the first circuit on the side of the first light-emitting diode and electrically linked to the first and second light-emitting diodes.

An optoelectronic circuit including a substrate and display pixels, each display pixel having a first light-emitting diode adapted to emit a first radiation and a second light-emitting diode adapted to emit a second radiation, the first light-emitting diode having a planar structure and resting on the substrate and the second light-emitting diode having a tridimensional structure and resting on the first light-emitting diode or crossing at least partially through the first light-emitting diode.

An optoelectronic device including light-emitting diodes (LED), each light-emitting diode including a semiconductor element corresponding to a nanowire, a microwire, and/or a nanometer- or micrometer-range pyramidal structure, and a shell at least partially covering the semiconductor element and adapted to emit a radiation and for each light-emitting diode, a photoluminescent coating including a single quantum well, multiple quantum wells or an heterostructure, covering at least part of the shell and in contact with the shell or with the semiconductor element and adapted to convert by optical pumping the radiation emitted by the shell into another radiation.

A method of manufacturing an optoelectronic device, comprising the successive steps of: providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; forming a stack of semiconductor layers on the first face, said stack including third and fourth opposite faces, the fourth face being on the side of the substrate, said stack including light-emitting diodes; forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate; forming conductive pads on the fourth face in at least some of the openings in contact with the stack; and forming photoluminescent blocks in at least some of the openings.

A method of manufacturing an optoelectronic device, comprising the successive steps of: a) providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; b) forming light-emitting diodes on the substrate, each light-emitting diode comprising a semiconductor microwire or nanowire covered by a shell; c) forming an encapsulation layer surrounding the light-emitting diodes; d) forming conductive pads on the encapsulation layer, on the side of the encapsulation layer opposite to the substrate, in contact with the light-emitting diodes; and e) forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate.

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Meylan, France

Wei Sin Tan