Nanyang Technological University

Massachusetts Institute of Technology

National University of Singapore

Zero-error Systems Pte Ltd

Wei Shu

Joseph Sylvester Chang

Yong Qu

Eugene A Fitzgerald

Soo Jin Chua

Li Hong Zhang

Jize Jiang

Kwen Siong Chong

Eng Kian Kenneth Lee

Siau Ben Chiah

Arunjai Mittal

Kwang Hong Lee

Bing Wang

Kenneth Eng Kian Lee

A control circuitry of a switched-mode power module, the switched-mode power module comprising a power stage configured to receive input power from a power supply and to output power to a load, the output power having an output voltage, the control circuitry configured to enable the power stage to output power when the output voltage is lower than a reference voltage by one of: a predetermined amount and an adaptive amount, the control circuitry further configured to disable the power stage from providing the output power when the output voltage exceeds the reference voltage by one of: a predetermined amount and an adaptive amount.

Switched-mode power module, a control circuitry for voltage and current regulations

A circuit for mitigating single-effect-transients (SETs) comprising: a first sub-circuit comprising a first p-type transistor arrangement configured to generate a first output and a first n-type transistor arrangement configured to generate a second output; and a second sub-circuit comprising a connecting p-type transistor arrangement and a connecting n-type transistor arrangement connected in series, wherein the first output and the second output are electrically coupled to each other through the second sub-circuit.

Circuit for mitigating single-event-transients

Disclosed is a subpixel circuitcomprising: a first switching deviceresponsive to a digital periodic signal Vto provide a digital control signal Vrelating to a digital data signal V, the digital periodic signal Vdefining 2+1 time slots within each frame cycle, where N is a predetermined integer. The digital data signal Vhas a predetermined value at a predetermined one of the 2+1 time slots; and the subpixel circuitfurther comprises a second switching deviceresponsive to the control signal Vc to drive an associated light emitting element

Subpixel circuitry for driving an associated light element, and method, display system and electronic device relating to same

A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display is provided. The method comprising providing a first wafer comprising first layers disposed over a first substrate, said first layers comprising non-silicon based semiconductor material for forming p-n junction LEDs (light emitting devices); providing a second partially processed wafer comprising silicon-based CMOS (Complementary Metal Oxide Semiconductor) devices formed in second layers disposed over a second substrate, said CMOS devices for controlling the LEDs; and bonding the first and second wafers to form a composite wafer via a double-bonding transfer process.

Method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display

An electronic circuit for single-event latch-up (SEL) detection and protection of a target integrated circuit (IC) is disclosed. The circuit comprises: a first detector configured for detecting an absolute load current (i) and comparing the absolute load current (i) with a threshold current (i); a second detector configured for detecting a rate of change of load current (di/dt) and comparing the rate of change of load current (di/dt) with a threshold current change rate (di/dt); and a determination module for triggering a power shut-down to the target IC if the absolute load current (i) exceeds the threshold current (i) and/or the rate of change of load current (di/dt) exceeds the threshold current change rate (di/dt).

Electronic circuit for single-event latch-up detection and protection

A method for providing a voltage reference at a present operating temperature in a circuit is provided. The circuit comprises a first MOS transistor having a first threshold voltage; and a second MOS transistor having a second threshold voltage different from the first threshold voltage is provided. Temperature insensitivity is obtained by compensating the difference between the first threshold voltage and the second threshold voltage with a parameter representative of the present operating temperature.

Method for providing a voltage reference at a present operating temperature in a circuit

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Singapore, Singapore

Wei Shu