Xi'an University of Technology

University of Illinois

Wei Shi

Sudip K Mazumder

Yanfeng Li

Jiaguang Han

Yi Zou

Lei Yang

Lei Hou

Chengang Dong

Xinmei Wang

Jianqiang Gu

Chunmei Ouyang

Liguo Zhu

Cheng Ma

Zhaohui Zhai

Lianghui Du

Disclosed is a transient-state THz spectrometer applied to cells and biological macromolecules, including a femtosecond laser amplifier. A femtosecond laser output by the femtosecond laser amplifier is divided into two beams of pump light and probe light after passing through a beam splitter of which a transmission-reflection ratio is 7:3, the pump light is focused to irradiate a gap between electrodes of a nonlinear photoconductive antenna and emit a terahertz wave after successively passing through a half wave plate, a silver-plated reflector and a first lens, the terahertz wave forms a terahertz wave collineation after successively passing through a second lens, a slab waveguide, a third lens and an ITO film, the terahertz wave collineation and the probe light form a probe light collineation of wavefront tilt which is perpendicularly incident on a ZnTe crystal and detected and recorded by using a CCD camera.

Transient-state THz spectrometer for detecting cells and biological macromolecules

This present invention provides a novel photoconductive semiconductor switch (PCSS) comprising: a semi-insulating substrate, an anode formed on the upper surface of said semi-insulating substrate, a first n-type doped layer formed on the lower surface of said semi-insulating substrate, a p-type doped layer formed on said first n-type doped layer, a second n-type doped layer formed on said p-type doped layer, a cathode formed on said second n-type doped layer, several recesses facing towards said first n-type doped layer and vertically extending into a part of said first n-type doped layer, an insulating layer formed on said second n-type doped layer and on the walls and the bottoms of said recesses, a gate electrode consisting of two parts, one part of the which formed on said insulating layer on the walls and the bottoms of recesses, and the other part of the which formed on a part of the insulating layer on the second n-type doped layer for electrically connecting the part of the gate electrode on the recesses, wherein the cathode and the gate electrode are electrically isolated.

Insulated-gate photoconductive semiconductor switch

Growing community of inventors

Shaanxi, China

Wei Shi