Tsinghua University

Powerchip Semiconductor Manufacturing Corporation

Wei-Sheng Chen

Yu-Lun Chueh

Fan-Wei Liu

Chih-Huang Lai

Tzu-Ming Cheng

Cheng-Yen Tsai

A method for recovering a valuable material from a perovskite solar cell includes immersing a perovskite solar cell device in an organic solvent to dissolve a monovalent metal cation, a divalent metal cation, and two halogen anions in the organic solvent, followed by adding an oxidizing agent and conducting a heating treatment to form a solid phase residue and a halogen molecule, dissolving the halogen molecule in deionized water to form a halogen solution, rinsing the solid phase residue with deionized water to obtain a solid phase and a liquid phase, calcining the solid phase into a metal oxide, or mixing the solid phase with the halogen solution to obtain a first metal halide, subjecting the liquid phase to an extraction treatment to form an oil phase layer, followed by conducting a back-extraction treatment, adding the halogen solution, and conducting a vacuum concentration treatment to obtain a second metal halide.

Method for recovering valuable material from perovskite solar cell

A method for recovering a resource from a CIGS thin-film solar cell to be recycled includes a) providing the CIGS thin-film solar cell, and b) subjecting the CIGS thin-film solar cell to a cooling treatment at a predetermined temperature, such that a light absorbing unit of the CIGS thin-film solar cell can be recovered due to thermal strain difference of materials of the CIGS thin-film solar cell.

Method for recovering resource from CIGS thin-film solar cell

A method for measuring wafer bow value comprising the following steps is provided. Place a wafer on a wafer chuck apparatus. A gas inlet process is performed on gas inlet passageways of a passageway pair of the wafer chuck apparatus. A gas outlet process is performed on gas outlet passageways of a passageway pair of the wafer chuck apparatus. A leak rate of each channel pair is measured by the control unit when the wafer is placed on the wafer chuck apparatus and during the gas inlet process and gas outlet process are performed. A wafer bow value of the wafer on the wafer chuck apparatus is estimated by the leak rate of the passageway pair. A wafer chuck apparatus is provided. A semiconductor process flow is provided.

Growing community of inventors

Taipei, Taiwan

Wei-Sheng Chen