Growing community of inventors

Taichung, Taiwan

Wei-Ping Dow

Average Co-Inventor Count = 3.33

ph-index = 1

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 9

Wei-Ping DowLiang-Jie Lin (2 patents)Wei-Ping DowChia-Hsiang Chen (1 patent)Wei-Ping DowHung-Ming Chang (1 patent)Wei-Ping DowYi-Yung Chen (1 patent)Wei-Ping DowWei-Yang Zeng (1 patent)Wei-Ping DowJie-Mao Wang (1 patent)Wei-Ping DowFuh-Sheng Shieu (1 patent)Wei-Ping DowHsiang-Ting Wang (1 patent)Wei-Ping DowPo-Ting Chen (1 patent)Wei-Ping DowTing-Yun Lin (1 patent)Wei-Ping DowFang-Yu Lin (1 patent)Wei-Ping DowTzong-Ming Wu (1 patent)Wei-Ping DowHong-Ta Yang (1 patent)Wei-Ping DowShih-Cheng Chang (1 patent)Wei-Ping DowWei-Ping Dow (5 patents)Liang-Jie LinLiang-Jie Lin (2 patents)Chia-Hsiang ChenChia-Hsiang Chen (3 patents)Hung-Ming ChangHung-Ming Chang (3 patents)Yi-Yung ChenYi-Yung Chen (1 patent)Wei-Yang ZengWei-Yang Zeng (1 patent)Jie-Mao WangJie-Mao Wang (1 patent)Fuh-Sheng ShieuFuh-Sheng Shieu (1 patent)Hsiang-Ting WangHsiang-Ting Wang (1 patent)Po-Ting ChenPo-Ting Chen (1 patent)Ting-Yun LinTing-Yun Lin (1 patent)Fang-Yu LinFang-Yu Lin (1 patent)Tzong-Ming WuTzong-Ming Wu (1 patent)Hong-Ta YangHong-Ta Yang (1 patent)Shih-Cheng ChangShih-Cheng Chang (1 patent)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. National Chung Hsing University (5 from 121 patents)

2. Other (1 from 832,912 patents)

3. Triallian Corporation (1 from 3 patents)


5 patents:

1. 11252816 - Composite with hollow nano-structures and application thereof

2. 11008665 - Method for manufacturing copper foil with rough surface in plating tank and its product

3. 10543510 - Method for modifying surface of non-conductive substrate and sidewall of micro/nano hole with rGO

4. 10465056 - Method for producing flexible conductive substrate with high transmittance and product thereof

5. 9105696 - Method of coating surface of substrate hole with layer of reduced graphene oxide

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as of
1/11/2026
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