Silicon Motion, Inc.

Wei-Lun Yan

Ming-Yen Lin

Chin-Pang Chang

Chun-Yi Lo

A method for performing writing management in a memory device, the memory device, and the controller thereof are provided. The method may include: writing first partial data of even-page data into a non-volatile (NV) memory; transmitting a first set of commands without a confirmation command to the NV memory, to write the first partial data and second partial data of the even-page data into an internal buffer within the NV memory; transmitting a second set of commands and the confirmation command to the NV memory, to write the first partial data and the second partial data into a block of the NV memory; writing third partial data of odd-page data into the NV memory; and writing the first and the second partial data into an even page of another block of the NV memory, and writing the third and fourth partial data into an odd page of this block.

Method for performing writing management in a memory device, and associated memory device and controller thereof

A memory device is provided, including a first memory die, a second memory die and a controller. The first memory die has a first system block. The second memory die has a second system block. The controller is coupled to the first and second memory dies through a chip enable lane in order to write the same in-system programming codes (ISP codes) to the first and second system blocks, in which, when the memory device is turned on, the controller reads the ISP code from the first system block or the second system block.

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Hsinchu, Taiwan

Wei-Lun Yan