Suzhou Oriental Semiconductor Co., Ltd.

Jiangsu University

Raycan Technology Co., Ltd (su Zhou)

Jiangnan University

University System of Maryland

Southeast University

Kunshan Go-visionox Opto-electronics Co., Ltd.

Suzhou Metabrain Intelligent Technology Co., Ltd.

Nr Electric Co., Ltd

Nr Engineering Co., Ltd

Trina Solar Co., Ltd.

Yangzhou University

Remacro Technology Co., Ltd.

Raycan Technology Co., Ltd.

Suzhou Silikron Semicoductor Co., Ltd

Wei Liu

Lei Liu

Yi Gong

Yuanlin Yuan

Zhendong Mao

Rui Wang

Qingguo Xie

Pengfei Wang

Xin Wang

Daoming Xi

Zhenyi Xu

Jianping Hu

Minzhi Lin

Xiang Liu

Ruochen Wang

Peng Xiao

Renkai Ding

Long Chen

Fan Wang

Yingfeng Cai

Xiaohong Li

Rengang Li

Xi Lin

Hong Chen

Yifeng Chen

Qiang Zhou

Lili Dong

Jian Zhou

Zhenghong Xu

Bin Li

Lvhua Han

Xiaobing Sun

Hui Li

Yuankun Li

Jinsong Shi

Hongliang Wang

Jifeng Wen

Chao Wu

Jinsong Gong

Deshan Zhang

Yu Jin

Gang Song

Guanghua Li

Lei Zhou

Xueling Zhang

Tianen Zhao

Chuanli Kang

Deyong Yang

Qing Li

Hongfeng Tao

Huihua Wen

Hongjun Chen

Dongfang Xu

Dewen Li

Mengyi Zhang

Lili Bo

Rencai Yue

Yuanbao Chen

Chen Zeng

Zhendong Ji

Yichao Sun

Jianfeng Zhao

Chaochao Zhou

Longhui Zhou

Xiangpeng Meng

Zeyu Sun

Jiuhu Li

Rui Zheng

Jianying Qian

Xiaoxue Wu

Jiaxin Zheng

Huagang Xu

Jun Zhao

Jiapei Ren

Yonghui Zhang

Yu Jiang

Dong Sun

Xingsheng Zhao

Qi Mu

Lei Jian

Jiawei Shi

Rongjun Tan

Tianyi Zeng

Sicong Cao

Weiyong Yang

Yibin Huang

Na Li

Qiuhan Tian

Shishun Zhu

Liangli Yu

Yongjian Cao

Xi Wang

Xingshen Wei

Zhouhong Xie

Qin Wang

Jianqiang Shen

Boce Zhang

Qiang Wei

Xiaozhong Sun

Disclosed are a method and system for detecting a complex multi-step attack in an electric power system. The method includes: collecting interaction behavior data of a network entity; preprocessing the interaction behavior data of the network entity based on a heterogeneous graph to obtain input data; and inputting the input data into a complex multi-step attack detection module to obtain an attack detection result. Information is extracted from the interaction behavior data to construct a node and an edge of the heterogeneous graph. Timestamp information of a destination node and an adjacent source node of the destination node is input into a Time2Vec layer to obtain a first time embedding representation. Data that fuses node feature information and the first time embedding representation is input into a Heteformer layer, and a second node embedding representation is obtained as input data and input into the complex multi-step attack detection module.

Method and system for detecting complex multi-step attack in electric power system

Disclosed in the present disclosure are an explainable vulnerability detection method and system based on dual-view causal reasoning. The vulnerability detection method includes: S, obtaining code samples, where the code samples include a training sample and a sample to be detected, sequentially performing data augmentation, static analysis, code property graph construction and feature extraction on the training sample, and obtaining a training data set; and sequentially performing static analysis, code property graph construction and feature extraction on the sample to be detected, and obtaining a data set to be detect; S, processing the training data set through a hybrid contrastive learning method, and establishing a vulnerability detection model; and inputting the data set to be detected into the vulnerability detection model, and outputting a vulnerability code; and S, performing causal reasoning on the vulnerability code, and outputting a vulnerability detection explanation.

Explainable vulnerability detection method and system based on dual-view causal reasoning

An IGBT device includes an p-type collector region, an n-type semiconductor layer, several p-type body regions located in the n-type semiconductor layer, a gate trench located in the n-type semiconductor layer and between adjacent p-type body regions, a gate trench located in the n-type semiconductor layer and between adjacent p-type body regions, a shielded gate located in a lower part of the gate trench, and a gate located in an upper part of the gate trench. The gate, the shielded gate, and the n-type semiconductor layer are insulated and isolated from each other. Among the several p-type body regions, at least one p-type body region has a first doping concentration and is defined as a first p-type body region, and at least one p-type body region has a second doping concentration and is defined as a second p-type body region.

Insulated gate bipolar transistor device

An IGBT device includes a p-type collector region, an n-type semiconductor layer located above the p-type collector region, a plurality of gate trenches, shielded gates, gates, and a p-type body region located in the n-type semiconductor layer and between adjacent gate trenches. The gate trenches are located in the n-type semiconductor layer. A shielded gate is located in a lower part of a gate trench. A gate is located in an upper part of the gate trench. The gate, the shielded gate, and the n-type semiconductor layer are insulated and isolated from each other.

A self-propelled full-automatic dense-planting vegetable transplanter and control method thereof includes a seedling taking and throwing mechanism, a box moving device, a crawler-type walking chassis, a seedling guiding device, a soil covering mechanism, a planting mechanism, and a dispersing device. The box moving device is mounted on the crawler-type walking chassis. The dispersing device is located on one side of the box moving device. The seedling taking and throwing mechanism includes a seedling taking and throwing movement mechanism and a linear movement mechanism. The linear movement mechanism is arranged above the box moving device. The seedling taking and throwing movement mechanism is configured to reciprocate between the dispersing device and the box moving device through the linear movement mechanism. The dispersing device is connected to the seedling guiding device.

Self-propelled full-automatic dense-planting vegetable transplanter and planting control method thereof

Provided is a direct memory access architecture, including: a direct memory access control component, a read data moving component, a write data moving component and a data storage component; wherein the direct memory access control component includes a control register, a read descriptor storage component, a write descriptor storage component, a read command transfer component and a write command transfer component; the control register is configured to obtain descriptor address information; the read descriptor storage component is configured to store a read descriptor obtained by using the control register; the write descriptor storage component is configured to store a write descriptor obtained by using the control register; the read command transfer component is configured to send, to the read data moving component, a read command; the write command transfer component is configured to send, to the write data moving component, a write command.

Direct memory access architecture, system and method, electronic device, and medium

Provided is a semiconductor power device. The device includes: at least one p-type body region located on the top of an n-type drift region, a first n-type source region and a second n-type source region located within the p-type body region, a first gate structure configured to control a first current channel between the first n-type source region and the n-type drift region to be turned on or off; and a second gate structure configured to control a second current channel between the second n-type source region and the n-type drift region to be turned on or off. The second gate structure is recessed in the n-type drift region.

Semiconductor power device

A laminated passivation structure of solar cell and a preparation method thereof are disclosed herein. The laminated passivation structure of solar cell includes a P-type silicon substrate, a first dielectric layer, a second dielectric layer, a third dielectric layer and a fourth dielectric layer sequentially arranged on the back surface of the P-type silicon substrate from inside to outside. The preparation method includes generating a first dielectric layer on the back surface of the P-type silicon substrate, and then sequentially depositing a second dielectric layer, a third dielectric layer and a fourth dielectric layer on the first dielectric layer.

Laminated passivation structure of solar cell and preparation method thereof

The present disclosure relates to a mechanical extension apparatus for an extendable chair unit and a chair unit including such mechanical extension apparatus. The mechanical extension apparatus includes: a reclining apparatus that include multiple links attached to the seat, the backrest and the footrest of the extendable seat, and such reclining apparatus is configured to convert the extendable seat between a sitting position and a lying position. The mechanical extension apparatus also includes an actuator that is attached to the reclining apparatus, and the actuator is configured to electronically convert the extendable seat between the sitting position and the lying position.

Mechanical extension apparatus for extendable seat and extendable seat

A cooperative control module, an adaptive cruise system and a control method thereof, and a vehicle are provided. The adaptive cruise system comprises a vehicle sensor module, a driving environment intelligent sensing module, a vehicle state response estimation module, an adaptive cruise and controllable suspension cooperative control module, and a power control module. The control method of adaptive cruise is optional, one is according to the cruise speed set by the driver, and the other one is according to the cruise comfort set by the driver. In the case of adaptive cruising according to cruise comfort, the optimal cruise speed is intelligently calculated by the adaptive cruise and controllable suspension system based on driving conditions and driver's demands. The controllable suspension is controlled cooperatively during cruising, and the suspension control parameters are adaptively switched according to the performance requirements of the vehicle under different driving conditions.

Cooperative control module, adaptive cruise system and control method thereof, and vehicle

The present application belongs to the technical field of semiconductor power devices and provides a semiconductor power device. The semiconductor power device includes an n-shaped substrate, an n-shaped epitaxial layer positioned on the n-shaped substrate, and at least three grooves recessed inside the n-shaped epitaxial layer, where a portion of the n-shaped epitaxial layer between two adjacent grooves of the at least three grooves is a mesa structure, an upper part of the mesa structure is provided with a p-shaped body region, and an n-shaped source region is provided inside the p-shaped body region. The mesa structure includes at least one mesa structure with a lower width being a first width and at least one mesa structure with a lower width being a second width, and the second width is greater than the first width.

A rotary tillage, sowing, ditching and pressing compound operation machine includes a fertilization and sowing device, an intermediate rotary tillage and ditching device, a frame, a liftable ditcher, and a multi-stage press wheel device. The multi-stage press wheel device includes a front press wheel and a rear press wheel. The front press wheel includes a front press roller shaft, front press rollers, and connecting rods. The rear press wheel includes a connecting plate, a rear press roller shaft, and a rear press roller. A first end of the connecting plate is connected to the rear press roller shaft by a support, and the connecting plate is connected to the frame in a manner of a sliding pair. The rear press roller is mounted on the rear press roller shaft in a manner of a revolving pair, and the rear press roller is located behind the liftable ditcher.

Rotary tillage, sowing, ditching and pressing compound operation machine

Provided is a hybrid electromagnetic suspension capable of self-powering and a control method thereof. The hybrid electromagnetic suspension includes an integrated structure of linear motor and cylinder block of equivalent hydraulic damper, a suspension spring, a connecting pipeline, a hydraulic rectifier bridge, an accumulator, a hydraulic motor and a rotary motor. The upper and lower chambers of the working cylinder, the lower chamber of working cylinder and oil storage cylinder are connected through the hydraulic rectifier bridge and the pipeline. The control has three modes including passive mode, semi-active mode and active mode. The ECU detects the road level according to the received sensor signal, and switches to the corresponding mode to control the suspension according to obtained road level, so as to obtain the optimal suspension performance under each road level. In the device of the invention, the linear motor and the equivalent hydraulic damper recover the vibration energy together in the case of good road condition; the linear motor and the equivalent hydraulic damper attenuate the suspension vibration together in the case of poor road surface, and at the same time the equivalent hydraulic damper also recovers the vibration energy, thus the self-powering can be realized.

Hybrid-electromagnetic suspension capable of self-powering and control method thereof

A gate trench and a source trench are formed simultaneously in the same etching process, a p-type semiconductor layer and a p-type doped region can be contacted in a self-aligned manner in the source trench, and the process is simple. A first insulating layer and a first gate are formed in a lower part of the gate trench, and a second insulating layer and a second gate are formed in an upper part of the gate trench so that the thick first insulating layer can protect the second gate from being easily broken down, the first gate can increase an electric field near a bottom of the gate trench, and thus a voltage withstand level of the semiconductor device can be improved. A bottom of the source trench can penetrate deep into a second n-type semiconductor layer.

Manufacturing method of a semiconductor device

Provided is a semiconductor super junction power device which includes a super junction MOSFET cell array composed of multiple super junction MOSFET cells. A gate structure of the super junction MOSFET cell includes a gate dielectric layer, a gate and an n-type floating gate. The gate and the n-type floating gate are located above the gate dielectric layer; the gate is located on a side close to the n-type source region, and the n-type floating gate is located on a side close to the n-type drift region; the gate acts on the n-type floating gate through capacitive coupling. The n-type floating gate of at least one MOSFET cell is isolated from the p-type body region through the gate dielectric layer, and the n-type floating gate of at least one MOSFET cell contacts the p-type body region through an opening in the gate dielectric layer to form a p-n junction diode.

Semiconductor super-junction power device

Growing community of inventors

Jiangsu, China

Wei Liu