Applied Materials, Inc.

Sony Corporation

Tokyo Electron Limited

Other

Google Inc.

Intermolecular, Inc.

Intel Corporation

Silicon Genesis Corporation

Nuro Corp.

Timbre Technologies, Inc.

Facebook, Inc.

Future Wei Technologies, Inc.

Netflix Inc.

Valence Technology, Inc.

Nextnav, LLC

Wei Liu

Mohammad Gharavi-Alkhansari

Ehsan Maani

Ali Jezu Tabatabai

Junwei Bao

Shifang Li

Shashank Sharma

Lara Hawrylchak

Son Truong Nguyen

Christopher Sean Olsen

Youfeng Wu

Mehdi Asghari

Dazeng Feng

Xikun Wang

Herbert H Hum

Ajay Kumar

Yuchen Zhou

Srinivas Gandikota

Christopher Dennis Bencher

Jian Li

Christopher B Wilkerson

Abhilash J Mayur

Schubert S Chu

Gang He

Hichem M'Saad

Gaurav Thareja

Wolfgang R Aderhold

Yi-Chiau Huang

Yoichi Yagasaki

Rui Li Xu

Li-Qun Xia

Michael S Barnes

Hua Chung

John Patrick Holland

Elad Mentovich

Cheng C Wang

Yixiong Yang

Benjamin Colombeau

Thorsten B Lill

Matthew S Rogers

Hong Heather Yu

Shaoher X Pan

Arun Raghupathy

Cheung Auyeung

Lawrence Camest West

Mauricio Breternitz, Jr

Lina Dong

David S Mui

Malcolm J Bevan

Johanes F Swenberg

Johanes S Swenberg

Rene George

Theresa Kramer Guarini

Meihua Shen

Vladimir Nagorny

Bernard Lloyd Hwang

Shashank C Deshmukh

Kin Pong Lo

Haifan Liang

Xuebin Li

Steven C H Hung

Sandeep Nijhawan

Dragan Valentin Podlesnik

Wei Qian

Jeroen Van Duren

Hanh D Nguyen

Sang M Lee

Vi Vuong

Patricia M Liu

Anisul Haque Khan

Vinay Damodar Shet

Michael A Bryan

Shiyu Sun

Jacob Newman

Jing Tang

Tze Wing Poon

Jacob Levy

Michael Dormody

Michael D Willwerth

Sanjay K Yedur

Badrinath Nagarajan

Naomi Yoshida

Guiyuan Han

Canfeng Lai

Hanyou Chu

Padmapani Nallan

Swaminathan T Srinivasan

Jacqueline S Wrench

Manuel B Madriaga

Dimitrios Kalavrouziotis

Jeffrey A Tobin

Wen Xiao Chen

David Palagashvili

Shiliang Hu

Yoshitaka Yokota

Gene S Lee

Tatsuya E Sato

Youxian Wen

Jian Wu

Joan Fong

One embodiment of the present invention sets forth a technique for performing schema-driven data processing. The technique includes detecting a first change to a first producer schema for a first dataset produced by a first data processor. The technique also includes performing a compatibility check between the first change and a first consumer schema associated with processing of the first dataset by a second data processor, wherein the first consumer schema includes a set of fields required by the second data processor. The technique further includes modifying an operation of the second data processor based on a result of the compatibility check.

Schema-driven distributed data processing

Embodiments described herein generally relate to a method and apparatus for fabricating a chamber component for a plasma process chamber. In one embodiment a chamber component used within a plasma processing chamber is provided that includes a metallic base material comprising a roughened non-planar first surface, wherein the roughened non-planar surface has an Ra surface roughness of between 4 micro-inches and 80 micro-inches, a planar silica coating formed over the roughened non-planar surface, wherein the planar silica coating has a surface that has an Ra surface roughness that is less than the Ra surface roughness of the roughened non-planar surface, a thickness between about 0.2 microns and about 10 microns, less than 1% porosity by volume, and contains less than 2Eatoms/centimetersof aluminum.

Process chamber process kit with protective coating

Field calibration of a pressure device involves collecting simultaneous pressure data or pressure and temperature data at two devices for multiple time points. Pressure differences between pairs of simultaneous data points of the collected pressure data are calculated. A model is fitted to the pressure differences and the temperatures and/or pressures, and model parameters are used to correct measurements from the second device. Alternatively, a pressure gradient is estimated for a region that encompasses the two devices for each time point. A distance is determined between the two devices. A pressure gradient difference is determined between the two devices for each time point. A pressure difference offset is obtained for one of the pairs of simultaneous data points for each time point. An average pressure difference offset is determined between the two devices and is used to correct measurements from one of the devices.

Field calibration of reference weather stations

Embodiments of the present disclosure generally relate to inductively coupled plasma sources and plasma processing apparatus. In at least one embodiment, plasma source includes a first sidewall and a gas injection insert defining a plasma source interior volume. The gas injection insert includes a peripheral gas injection port, a second sidewall disposed concentric with the first sidewall, and a center gas injection port. The plasma source includes a first induction coil disposed proximate the first sidewall and disposed around the first sidewall. The plasma source includes a first radio frequency power generator coupled with the first induction coil. The plasma source includes a second induction coil disposed proximate the second sidewall and disposed around the second sidewall. The plasma source includes a second radio frequency power generator coupled with the second induction coil.

Plasma sources and plasma processing apparatus thereof

Embodiments of the present disclosure generally relate to the fabrication of integrated circuits and to apparatus for use within a substrate processing chamber to improve film thickness uniformity. More specifically, the embodiments of the disclosure relate to an edge ring. The edge ring may include an overhang ring.

Film thickness uniformity improvement using edge ring and bias electrode geometry

A method of selectively and conformally doping semiconductor materials is disclosed. Some embodiments utilize a conformal dopant film deposited selectively on semiconductor materials by thermal decomposition. Some embodiments relate to doping non-line of sight surfaces. Some embodiments relate to methods for forming a highly doped crystalline semiconductor layer.

Doping techniques

An immersive teleconferencing system includes three-dimensional sides positioned about a vertical axis forming a line of reflection of the immersive teleconferencing system. Tree-dimensional sides terminating at ends form an enclosure that houses a camera housed at a substantially central position. A first loudspeaker is disposed above the camera about the vertical axis and a second loudspeaker is disposed below the camera about the vertical axis.

Dual conferencing system

Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film.

Methods for metal oxide post-treatment

Edge ring

Embodiments of the present disclosure generally relate to inductively coupled plasma sources, plasma processing apparatus, and independent temperature control of plasma processing. In at least one embodiment, a method includes introducing a process gas into a gas injection channel and generating an inductively coupled plasma within the gas injection channel. The plasma includes at least one radical species selected from oxygen, nitrogen, hydrogen, NH and helium. The method includes delivering the plasma from the plasma source to a process chamber coupled therewith by flowing the plasma through a separation grid between the plasma source and a substrate. The method includes processing the substrate. Processing the substrate includes contacting the plasma including the at least one radical species with a first side of the substrate facing the separation grid and heating the substrate using a plurality of lamps located on a second side of the substrate opposite the separation grid.

Plasma processing with independent temperature control

This invention is a projector headlight that, while offering dual beam patterns, boasts a 100% utilization of the light emitted from a light source by one of the following methods: (1) employing a reflective cutoff shield means to reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern, (2) using reversible cutoff shield means to reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern with no moving part involved, (3) utilizing a selective light-filter cutoff means to selectively reflect the incoming light from said light source back to the reflector to enhance the illumination in low-beam pattern without making use of any moving part, (4) using a low-beam light-emitting subassembly and a high-beam light-emitting subassembly that are separated by partition means to achieve dual beam patterns with no moving part, or (5) adopting a low-beam light-emitting subassembly in low-beam pattern and a high-beam light-emitting subassembly in high-beam pattern without any moving part.

Apparatus of projector headlights

Methods and apparatuses for processing substrates, such as during metal silicide applications, are provided. In one or more embodiments, a method of processing a substrate includes depositing an epitaxial layer on the substrate, depositing a metal silicide seed layer on the epitaxial layer, and exposing the metal silicide seed layer to a nitridation process to produce a metal silicide nitride layer from at least a portion of the metal silicide seed layer. The method also includes depositing a metal silicide bulk layer on the metal silicide nitride layer and forming or depositing a nitride capping layer on the metal silicide bulk layer, where the nitride capping layer contains a metal nitride, a silicon nitride, a metal silicide nitride, or a combination thereof.

Methods and apparatus for metal silicide deposition

A system controls a teleconferencing device by detecting a current operating state of the teleconferencing device and detecting a contact with a touch-screen device associated with a selection of an audio and a visual input, a selection of an option from a list of options that performs an action in the teleconferencing device, or a transferring of a virtual object between a plurality of devices. The system continuously senses a gesture across the touch-screen device by identifying a first contact with the touch-screen, a distance of a continuous contact with the touch screen, and a last contact with the touch-screen. The process executes a command associated with the selection of an audio and a visual input, the selection of an option from a list of options that performs an action in the teleconferencing device, or the transferring of a virtual object between a plurality of devices.

Mode control and content sharing

A system automatically frames locations by detecting a user's presence within a virtual detection space. The system detects sound in the detection space and converts the sound into electrical signals. The electrical signals are converted into a digital signals at common or periodic sampling rates. The system identifies speech segments in the digital signals and attenuates noise like components within or adjacent to them. The system identifies the physical locations of a speech source generating the speech segments and automatically adjusts a camera framing based on the estimated location of the active speech source generating the speech segments.

Auto-framing through speech and video localizations

Growing community of inventors

San Jose, CA, United States of America

Wei Liu