Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Liang Lu

Chih-Han Lin

Chao-Cheng Chen

Ming-Ching Chang

Shih-Yao Lin

Chang-Yin Chen

Kuei-Yu Kao

Chia-Yang Liao

A semiconductor device includes a substrate. The semiconductor device includes a fin that is formed over the substrate and extends along a first direction. The semiconductor device includes a gate structure that straddles the fin and extends along a second direction perpendicular to the first direction. The semiconductor device includes a first source/drain structure coupled to a first end of the fin along the first direction. The gate structure includes a first portion protruding toward the first source/drain structure along the first direction. A tip edge of the first protruded portion is vertically above a bottom surface of the gate structure.

Semiconductor devices and methods of manufacturing thereof

A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.

Method for manufacturing semiconductor devices having gate spacers with bottom portions recessed in a fin

Semiconductor device having gate spacers extending below a fin top surface

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Hsinchu, Taiwan

Wei-Liang Lu