Nan Ya Technology Corporation

Winbond Electronics Corporation

Wei-Li Lai

Jui-Hsiu Jao

Chun-Shun Huang

Tuo-Hung Hou

Chung-Wei Hsu

Chun-Tse Chou

The present disclosure provides a method for preparing a semiconductor device. The semiconductor device includes a substrate, a first region, a second region, a third region, a fourth region, a fifth region and a sixth region. The first type region is disposed on the substrate and has a ring structure. The second type region is disposed on the substrate and disposed in the center of the first type region. A plurality of second well regions are formed in the first region, the second region, the fourth region, the fifth region and the sixth region. A plurality of second well regions in the first region, the second region, the fourth region, the fifth region and the sixth region. The first well region, the second well region, the first type region and the second type region are formed by ion implantation.

Method for preparing semiconductor device

The present disclosure provides a semiconductor device and a method for preparing the same. The semiconductor device includes a substrate, a first type region, and a second type region. The first type region is disposed on the substrate and has a ring structure. The second type region is disposed on the substrate and disposed in the center of the first type region. The second type region has a square shape and includes a plurality of corners.

Semiconductor device and method for preparing the same

The present disclosure provides a self-rectifying RRAM cell structure including a first electrode layer formed of a nitride of a first metal element, a second electrode layer formed of a second metal element that is different from the first metal element, a first resistive switching layer and a second resistive switching layer. The first resistive switching layer is sandwiched between the first electrode layer and the second resistive switching layer, and the second resistive switching layer is sandwiched between the first resistive switching layer and the second electrode layer. The first resistive switching layer has a first bandgap that is lower than the second bandgap of the second resistive switching layer. Furthermore, a RRAM 3D crossbar array architecture is also provided.

Growing community of inventors

Taichung, Taiwan

Wei-Li Lai