Lear Corporation

Shanghai Huahong Grace Semiconductor Manufacturing Corporation

Wei Le

Feng Jin

Yi Sun

Han Zhang

Jia Lei Ma

Zhi Han

Xinjie Yang

Liang Song

A switching LDMOS device is formed first well in a semiconductor substrate that includes an LDD region and a first body doped region; a first heavily doped region serving as a source region is provided in the LDD region, and a second heavily doped region serving as a drain region is provided in the first body doped region; a channel of the switching LDMOS device is formed at a surface layer of the semiconductor substrate between the LDD region and the body doped region and below the gate structure; and one side of the LDD region and one side of the body doped region which are away from the gate structure both are provided with a field oxide or STI, and one side of the field oxide or STI is in contact with the first heavily doped region or the second heavily doped region.

Switching LDMOS device and method for making the same

A rotary mechanism includes an upper seat pan, a lower seat pan and an arc slideway mechanism. The upper and lower seat pans are connected at their sides and can rotate relative to each other. A middle inner slide rail of the arc slideway mechanism, which has a long through-hole in its center and is fixed to the lower seat pan, is positioned between an upper supporting plate and a lower supporting plate, both of which have a long aperture in their respective centers. Fixed parts run through the long through-hole and the long apertures, and fix an upper outer slide rail and a lower outer slide rail. A locking mechanism having portions fixed to the upper seat pan and the lower seat pan, respectively, is arranged to cooperate with the arc slideway mechanism to limit relative rotation of the upper and lower seat pans.

Rotary mechanism of rotary seats

Growing community of inventors

Shanghai, China

Wei Le