National Yang Ming Chiao Tung University

Industrial Technology Research Institute

Wei-Lan Chiu

Chih Hung Chen

Hsiang-Hung Chang

Yi-Chia Chou

A through substrate via structure and a manufacturing method thereof, and a redistribution layer structure and a manufacturing method thereof are provided. The through substrate via structure includes a columnar conductive layer and a nanotwinned metal film disposed at least around the conductive layer. In a cross-section of the through substrate via structure, relative to a total area of the conductive layer and the nanotwinned metal film, an area ratio of the nanotwinned metal film is 50% or less by area.

Through substrate via structure and manufacturing method thereof, redistribution layer structure and manufacturing method thereof

An optical micro-particle detector including a light source, a gas channel and a plurality of optical detectors is provided. The light source is configured to generate a light beam. The gas channel has at least one curved segment. The curved segment has a light entrance and a plurality of light exits. The light beam from the light source enters the gas channel through the light entrance. The plurality of optical detectors are optically coupled to the light exits, respectively.

Optical micro-particles detector

The present invention is related to a preferably oriented nanotwinned Au film, a method of preparing the same, and a bonding structure comprising the same. The nanotwinned Au film has a thickness direction. The nanotwinned Au film is stacked along a [220] crystallographic axis orientation in the thickness direction. At least 50% by volume of the nanotwinned Au film is composed of a plurality of nanotwinned Au grains which are adjacent to each other, arranged in a direction perpendicular to the thickness direction, and stacked along a [111] crystallographic axis orientation.

Preferably oriented nanotwinned Au film, method of preparing the same, and bonding structure comprising the same

An electrical connecting element, a method of fabricating the same, and an electrical connecting structure comprising the same are disclosed. The method of fabricating the electrical connecting structure having twinned copper of the present invention comprises steps of: (A) providing a first substrate; (B) forming a nano-twinned copper layer on part of a surface of the first substrate; (C) forming a solder on the nano-twinned copper layer of the first substrate; and (D) reflowing the nano-twinned Cu layer and solder to produce a solder joint, wherein at least part of the solder reacts with the nano-twinned copper layer to produce an intermetallic compound (IMC) layer which comprises a CuSn layer, This invention reduces the voids formation in the interface between the intermetallic compound and the solder, and then enhances the reliability of solder joints.

Growing community of inventors

Kaohsiung, Taiwan

Wei-Lan Chiu