Novatek Microelectronics Corp.

Wei-Kuo Huang

I-Hsiu Chen

Yu-Yuan Yao

A backside illumination global shutter pixel is disposed in a substrate having a first surface and a second surface and includes an isolation structure having a deep trench isolation pattern, a storage node, and a photoelectric conversion element. The deep trench isolation pattern has a channel and defines a first region and a second region connected with each other by the channel. The storage node is disposed in the second region. The photoelectric conversion element has a main photoelectric conversion portion disposed in the first region and an extending photoelectric conversion portion extended from the main photoelectric conversion portion through the channel to the second region. The extending photoelectric conversion portion is disposed between the second surface and the storage node. A backside illumination global shutter sensor including a plurality of backside illumination global shutter pixels is also provided.

Backside illumination global shutter sensor and pixel thereof

An image sensor including a substrate, a deep well layer, multiple first sensing units, second sensing units and third sensing units is provided. The first, the second and the third sensing units are located between a first surface and the deep well layer. A ratio between an area of a part of the deep well layer under each first sensing unit and an area of each first sensing unit is a first area ratio. A ratio between an area of a part of the deep well layer under each second sensing unit and an area of each second sensing unit is a second area ratio. A ratio between an area of a part of the deep well layer under each third sensing unit and an area of each third sensing unit is a third area ratio. The first area ratio is greater than the second and the third area ratios.

Growing community of inventors

Hsinchu County, Taiwan

Wei-Kuo Huang