Huga Optotech Inc.

Wei-Kai Wang

Su-Hui Lin

Tzong-Liang Tsai

Wen-Chung Shih

Yi-Cun Lu

The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The first pattern is different from the second pattern. The at least one electrode is formed on the top-most layer. Therefore, the sidewall of the semiconductor light-emitting device according to the invention exhibits a surface morphology, which increases the light extraction area of the sidewall, and consequently enhances the light extraction efficiency of the semiconductor light-emitting device.

Semiconductor light-emitting device with high light-extraction efficiency

A high efficiency lighting device comprising a light emitting diode structure, an eutectic layer and a distributed-Bragg reflecting layer (DBR) therebetween is disclosed. The distributed-Bragg reflecting layer is attached to said light emitting diode structure by vapor deposition and comprises a plurality of high refraction layers, a plurality of low refraction layers and a micro-contact layer array. The high refraction layers and said low refraction layers are arranged in an alternating manner, so as to form a stacked thin film having an alternate high/low refraction pattern. The micro-contact layers are in said stacked thin film and extend vertically through the stacked thin film, therefore connecting said light emitting diode structure and said eutectic layer.

High efficiency lighting device

The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

Semiconductor light-emitting device

The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

Growing community of inventors

Shengang, Taiwan

Wei-Kai Wang