Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Ju Lee

Zhiqiang Wu

Chung-Wei Wu

Chun-Fu Cheng

Chun-fu Cheng

A method includes forming a plurality of first semiconductor layers and a plurality of second semiconductor layers in an alternate manner over a substrate; patterning the first and second semiconductor layers and the substrate to form a fin structure, in which the fin structure includes a base portion protruding from the substrate and remaining portions of the first and second semiconductor layers; etching the fin structure to form a first recess extending through the remaining portions of the first and second semiconductor layers and into the base portion; epitaxially growing a first epitaxy layer in the first recess; epitaxially growing a second epitaxy layer over the first epitaxy layer; oxidizing the first epitaxy layer, wherein the second epitaxy layer remains unoxidized after the first epitaxy layer is oxidized; and after oxidizing the first epitaxy layer, forming a source/drain epitaxy structure on the second epitaxy layer.

Semiconductor device and manufacturing method thereof

A semiconductor device includes a substrate, a plurality of nanowires, a gate structure, a source/drain epitaxy structure, and a semiconductor layer. The substrate has a protrusion portion. The nanowires extend in a first direction above the protrusion portion of the substrate, the nanowires being arranged in a second direction substantially perpendicular to the first direction. The gate structure wraps around each of the nanowires. The source/drain epitaxy structure is in contact with an end surface of each of the nanowires, in which a bottom surface of the source/drain epitaxy structure is lower than a top surface of the protrusion portion of the substrate. The semiconductor layer is in contact with the bottom surface of the epitaxy structure, in which the semiconductor layer is spaced from the protrusion portion of the substrate.

Growing community of inventors

Hsinchu County, Taiwan

Wei-Ju Lee