Huawei Technologies Co., Limited

Spreadtrum Communications (shanghai) Co., Ltd.

Shanghai Hua Hong Nec Electronics Company, Limited

Wei Ji

Bin Jiang

Fuhuei Lin

Sheng Wu

Jingming Xu

Zhenchao Lin

Ye Yuan

Yaqin Yong

Xue Lu

Jiquan Liu

Shengan Xiao

Bin Kan

A method includes a first electronic device that displays an interface of a first application and an interface of a second application and obtains first content in the interface of the first application and second content in the interface of the second application; receives a drag operation on both the first content and the second content and displays a first window after the first content and the second content are dragged to a first area on a touchscreen of the first electronic device, where the first window includes third content related to the first content and the second content and an option for sharing.

Multi-application interaction method

This application is applicable to the field of terminal technologies, and in particular, to a collaborative display method, a terminal device, and a computer-readable storage medium. In the method, a first display region of a home screen of a first terminal device in a second terminal device and a second display region of a virtual screen in the second terminal device may be determined, so that the second terminal device may display the home screen in the first display region and display the virtual screen in the second display region.

Collaborative display method, terminal device, and computer-readable storage medium

Method and apparatus for reducing distortion echo are provided. K-path amplification and pre-distortion process are performed to the downlink reference signal to obtain K-path pre-distorted signals. Afterwards, filtering is performed using the self-adaptive filters which correspond to the downlink reference signal x(t) and the K-path pre-distorted signals to obtain the filtering signals. Error signals are obtained by calculating differences between the target signal and each of the filtering signals. The minimum-value fusion process is performed to the error signals to obtain the residual signal which is then output as the final self-adaptive echo cancellation. In embodiments of the present disclosure, the residual signal is relatively small as the minimum-value fusion process is performed to the error signals. That is to say, echo loss is relatively great. Therefore, the method may provide echo loss with high amplitude under a situation that a speaker has relatively serious distortion.

Method and apparatus for reducing distortion echo

The embodiments of the present disclosure provide a method and an apparatus for reducing an echo, which apply a first stage adaptive filter to a downlink reference signal to obtain a first stage filtered signal and a first error signal; after performing a K-path gain process and a K-path pre-distortion process to the downlink reference signal, apply the at least one second stage adaptive filter to a K-path pre-distorted signal to obtain a second stage filtered signal and a second error signal; and perform a minimum value fusion process to the first error signal and the second error signal so as to obtain a residue signal, which is considered as a final output of adaptive echo cancellation. Accordingly, the present disclosure realizes steadily providing a relatively high echo loss under a circumstance that a speaker suffers a relatively great distortion.

Method and apparatus for reducing echo

A method is provided for fabricating a semiconductor structure. The method includes providing a semiconductor substrate, forming an epitaxial layer on a top surface of the semiconductor substrate and having a predetermined thickness, and forming a plurality of trenches in the epitaxial layer. The trenches are formed in the epitaxial layer and have a predetermined depth, top width, and bottom width. Further, the method includes performing a first trench filling process to form a semiconductor layer inside of the trenches using a mixture gas containing at least silicon source gas and halogenoid gas, stopping the first trench filling process when at least one trench is not completely filled, and performing a second trench filling process, different from the first trench filling process, to fill the plurality of trenches completely.

Semiconductor structures and fabrication methods including trench filling

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Shanghai, China

Wei Ji