Alcatel-lucent USA Inc.

Lucent Technologies Inc.

Wei-Jer Sung

Young-Kai Chen

Rose Fasano Kopf

Yang Yang

Chun-Ting Liu

Andreas Leven

Vincent Etienne Houtsma

Lay-Lay Chua

Nils Guenter Weimann

A method for fabricating a bipolar transistor includes forming a vertical sequence of semiconductor layers, forming an implant mask on the last formed semiconductor layer, and implanting dopant ions into a portion of one or more of the semiconductor layers. The sequence of semiconductor layers includes a collector layer, a base layer that is in contact with the collector layer, and an emitter layer that is in contact with the base layer. The implanting uses a process in which the implant mask stops dopant ions from penetrating into a portion of the sequence of layers.

Bipolar transistors with vertical structures

A method for fabricating a bipolar transistor includes forming collector, base, and emitter semiconductor layers on a substrate such that the layers form a vertical sequence with respect to an adjacent surface of the substrate. The method includes etching away a portion of a top one of the semiconductor layers to expose a portion of the base semiconductor layer and then, growing semiconductor on the exposed portion of the base layer. The top one of the semiconductor layers is the layer of the sequence that is located farthest from the substrate. The growing causes grown semiconductor to laterally surround a vertical portion of the top one of the semiconductor layers.

Flat profile structures for bipolar transistors

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New Providence, NJ, United States of America

Wei-Jer Sung