Taiwan Semiconductor Manufacturing Comp. Ltd.

United Microelectronics Corp.

Wei-Jen Wu

Yi-Wei Chen

Chen-Yi Weng

Jing-Yin Jhang

Chun-Yen Lo

Rung-Yuan Lee

Jia-Feng Fang

Bingchien Wu

Ming-Yueh Tsai

Ching-Jiunn Huang

Chih-Chien Liu

Chun-Yuan Wu

Cheng-Ming Wu

Kun-Ju Li

Po-Cheng Huang

Yu-Ting Li

Fu-Shou Tsai

Wen-Chin Lin

Chih-Hsun Lin

Kun-Pi Cheng

Chin-Kun Fang

Sung-Cheng Chiu

Chung-Jen Chen

A semiconductor package includes a first semiconductor device and a second semiconductor device. The first semiconductor device includes a first alignment pattern having a plurality of first scale patterns arranged in a first direction. The second semiconductor device is mounted over the first semiconductor device and includes a second alignment pattern having a plurality of second scale patterns arranged in a second direction parallel to the first direction, and a scale pitch of the first scale patterns is different from a scale pitch of the second scale patterns.

Semiconductor package and method of bonding workpieces

Semiconductor package, method of bonding workpieces and method of manufacturing semiconductor package

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first material layer on the substrate; forming a stop layer on the first material layer; forming a second material layer on the stop layer; and performing a planarizing process to remove the second material layer, the stop layer, and part of the first material layer for forming a gate layer.

Method for fabricating semiconductor device

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.

Method for fabricating a semiconductor device

Semiconductor device and method for fabricating the same

A semiconductor process wafer having substantially co-planar active areas and a laser marked area in an adjacent inactive area and method for forming the same to eliminate a step height and improve a subsequent patterning process over the active areas wherein an inactive area trench is formed overlying the laser marked area in parallel with formation of STI trenches in the active area whereby the active areas and the inactive area are formed substantially co-planar without a step height.

Method to avoid a laser marked area step height

A method for developing a photo-exposed photoresist layer to improve a critical dimension uniformity (CDU) for a semiconductor device manufacturing process including providing a semiconductor process wafer having a process surface comprising a photoresist layer photo-exposed according to an exposure pattern; dispensing a predetermined amount of developer solution over a stationary semiconductor process wafer to form a film of developer solution covering the process surface; partially developing the exposed portions of the photoresist layer comprising maintaining the semiconductor process wafer in a stationary position for a predetermined time period; rotating the semiconductor process wafer for a predetermined period of time to remove a portion of the developer solution; and, repeating the steps of dispensing, partially developing, and rotating, for a predetermined number of repetition cycles to complete a photoresist development process.

Method for photoresist development with improved CD

Growing community of inventors

Tainan, Taiwan

Wei-Jen Wu