Taiwan Semiconductor Manufacturing Comp. Ltd.

Novatek Microelectronics Corp.

Wei-Jen Lo

Syun-Ming Jang Jang

Da-Yuan Lee

Weng Chang

Hsien-Ming Lee

Hung-Chin Chung

Kuan-Ting Liu

Tze-Liang Lee

Po-Cheng Shih

Teng-Yi Lin

Wei-Fu Chen

Chin-Hsiang Lin

Hsin-Chang Lee

Anthony Yen

Huai-Tei Yang

Yun-Yue Lin

Chih-Teng Liao

Chih-Cheng Lin

Yu-Chi Lin

Lun-Kuang Tan

Yao-Ching Ku

Hsuan-Chen Chen

Mark Chien

Kei-Wei Chen

Shahaji B More

Ying-Lang Wang

Cheng-Han Lee

Shih-Chieh Chang

Kuo-Hsiu Wei

Chien-Feng Lin

Ching-Lun Lai

Chih-Chia Kuo

Tang-Kuei Chang

Tsui-Chin Chen

Tung-Hsin Lee

Chieh-Hao Wang

Sen-Lin Kuo

Pao-Chen Shih

Yen-Lung Lu

Chih Yung Hung

Chao Yung Liu

A representative method includes forming a photo-sensitive material over a substrate, and forming a cap layer over the photo-sensitive material, and patterning the cap layer. Using the patterned cap layer, a first portion of the photo-sensitive material is selectively exposed to a pre-selected light wavelength to change at least one material property of the first portion of the photo-sensitive material, while preventing a second portion of the photo-sensitive material from being exposed to the pre-selected light wavelength. One, but not both of the following steps is then conducted: removing the first portion of the photo-sensitive material and forming in its place a conductive element at least partially surrounded by the second portion of the photo-sensitive material, or removing the second portion of the photo-sensitive material and forming from the first portion of the photo-sensitive material a conductive element electrically connecting two or more portions of a circuit.

Patterning interconnects and other structures by photo-sensitizing method

The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function metal layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.

Semiconductor device with profiled work-function metal gate electrode and method of making

A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

Etching apparatus and methods of cleaning thereof

The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

Deposition equipment with adjustable temperature source

An image device and an image processing integrated circuit (IC) of the image device are provided. The image device includes a camera module, a display panel, a central processing IC, and an image processing IC. Based on a control of the central processing IC, the image processing IC decides whether to pre-process an output of the camera module and provide a pre-processed result to the central processing IC, or provide the output of the camera module directly to the central processing IC. Based on the control of the central processing IC, the image processing IC decides whether to post-process an output of the central processing IC and provide a post-processed result to the display panel, or provide the output of the central processing IC directly to the display panel.

Image device and image processing integrated circuit

A method for fabricating a pellicle includes forming a first dielectric layer over a back surface of a substrate. After forming the first dielectric layer, and in some embodiments, a graphene layer is formed over a front surface of the substrate. In some examples, after forming the graphene layer, the first dielectric layer is patterned to form an opening in the first dielectric layer that exposes a portion of the back surface of the substrate. Thereafter, while using the patterned first dielectric layer as a mask, an etching process may be performed to the back surface of the substrate to form a pellicle having a pellicle membrane that includes the graphene layer.

Pellicle fabrication methods and structures thereof

The present disclosure provides a semiconductor device with a profiled work-function metal gate electrode. The semiconductor structure includes a metal gate structure formed in an opening of an insulating layer. The metal gate structure includes a gate dielectric layer, a barrier layer, a work-function meta layer between the gate dielectric layer and the barrier layer and a work-function adjustment layer over the barrier layer, wherein the work-function metal has an ordered grain orientation. The present disclosure also provides a method of making a semiconductor device with a profiled work-function metal gate electrode.

Semiconductor device with metal gate structure comprising work-function metal layer and work-fuction adjustment layer

A clock generating device is disclosed. The clock generating device includes a clock generating unit, for counting a synchronization period of a synchronization signal, generating a first interrupt signal according to the synchronization signal, generating a pulse-width modulation signal according a control signal, counting a phase difference between the synchronization signal and the pulse-width modulation signal, and generating a second interrupt signal according to the pulse-width modulation signal; and a computing unit, for acquiring the synchronization period according to the first interrupt signal, acquiring the phase difference according to the second interrupt signal, and adjusting the control signal according to the synchronization period, a modulation period of the pulse-width modulation signal and the phase difference.

Clock generating device and related synchronization method

Growing community of inventors

Hsinchu, Taiwan

Wei-Jen Lo