United Microelectronics Corp.

Syngen Biotech, Co., Ltd.

Taiwan Semiconductor Manufacturing Comp. Ltd.

National Taiwan University

T.y.c. Brother Industrial Co., Ltd.

Wei-Jen Chen

Kai-Lin Lee

Zhi-Cheng Lee

Chi-Hsiao Chen

Chee-Wee Liu

Chih-Lin Wang

Ya-Jui Tsou

Shao-Yu Lin

Shiuan-Huei Wu

Yu-Lun Tsai

Tai-Ju Chen

Chuang-Han Hsieh

An-Shih Shih

Ting-Hsuan Kang

Chiau-Ling Gung

Ren-Yu He

Hung-Wen Huang

Hao-Hsiang Yang

Yu-Ren Wang

Tsuo-Wen Lu

Chien-Liang Lin

Keng-Jen Lin

Chih-Chung Chen

Ming-Shan Kuo

Jih-Chao Chiu

Bing-Huang Gau

Po-An Chen

Yu-Shan Wei

Pang-Chun Liu

Hui-Fang Chu

Chi-Fai Chau

A memory device includes a spin-orbit-transfer (SOT) bottom electrode, an SOT ferromagnetic free layer, a first tunnel barrier layer, a spin-transfer-torque (STT) ferromagnetic free layer, a second tunnel barrier layer and a reference layer. The SOT ferromagnetic free layer is over the SOT bottom electrode. The SOT ferromagnetic free layer has a magnetic orientation switchable by the SOT bottom electrode using a spin Hall effect or Rashba effect. The first tunnel barrier layer is over the SOT ferromagnetic free layer. The STT ferromagnetic free layer is over the first tunnel barrier layer and has a magnetic orientation switchable using an STT effect. The second tunnel barrier layer is over the STT ferromagnetic free layer. The second tunnel barrier layer has a thickness different from a thickness of the first tunnel barrier layer. The reference layer is over the second tunnel barrier layer and has a fixed magnetic orientation.

Memory device and formation method thereof

A high electron mobility transistor includes a substrate. A channel layer is disposed on the substrate. An active layer is disposed on the channel layer. The active layer includes a P-type aluminum gallium nitride layer. A P-type gallium nitride gate is disposed on the active layer. A source electrode and a drain electrode are disposed on the active layer.

HEMT and method of fabricating the same

A combination of probiotics for improving body compositions includesS38 andBC198. The combination of probiotics can be a medicine composition, a nutrient supplement, healthy food or a combination thereof. The applications of the combination of probiotics include weight loss, reduction of fat, abatement of appetite, production of butyric acid within intestinal tracts and an increased count ofor Ruminococcaceae inside intestines.

Combination of probiotics withS38 andBC198 and applications thereof for improving body compositions

A method of fabricating a metal gate transistor includes providing a substrate. Then, a high-k dielectric layer is formed to cover the substrate. Later, an ion implantation process is performed to implant fluoride ions into the high-k dielectric layer. After the ion implantation process, a polysilicon gate is formed on the high-k dielectric layer. Next, an interlayer dielectric layer is formed to cover the substrate and the polysilicon gate. Finally, the polysilicon gate is replaced by a metal gate.

Method of fabricating metal gate transistor

A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; removing the hard mask to form a first recess for exposing the barrier layer; removing the hard mask adjacent to the first recess to form a second recess; and forming a p-type semiconductor layer in the first recess and the second recess.

High electron mobility transistor and method for fabricating the same

A memory device comprises a source region, a drain region, a channel region, a gate dielectric layer, an MTJ stack, and a metal gate. The source region and the drain region are over a substrate. The channel region is between the source region and the drain region. The gate dielectric layer is over the channel region. The MTJ stack is over the gate dielectric layer. The MTJ stack comprises a first ferromagnetic layer, a second ferromagnetic layer with a switchable magnetization, and a tunnel barrier layer between the first and second ferromagnetic layers. The metal gate is over the MTJ stack.

Memory device and forming method thereof

A memory structure comprises a dielectric layer, a first ferromagnetic bottom electrode, a second ferromagnetic bottom electrode, an SOT channel layer, and an MTJ structure. The dielectric layer is over the substrate. The first ferromagnetic bottom electrode extends through the dielectric layer. The second ferromagnetic bottom electrode extends through the dielectric layer, and is spaced apart from the first ferromagnetic bottom electrode. The SOT channel layer extends from the first ferromagnetic bottom electrode to the second ferromagnetic bottom electrode. The MTJ structure is over the SOT channel layer.

Memory structure and formation method thereof

A semiconductor substrate is provided. A trench isolation region is formed in the semiconductor substrate. A resist pattern having an opening exposing the trench isolation region and partially exposing the semiconductor substrate is disposed adjacent to the trench isolation region. A first ion implantation process is performed to implant first dopants into the semiconductor substrate through the opening, thereby forming a well region in the semiconductor substrate. The trench isolation region is within the well region. A second ion implantation process is performed to implant second dopants into the semiconductor substrate through the opening, thereby forming an extended doped region contiguous with the well region. The resist pattern is then removed. After removing the resist pattern, a gate dielectric layer is formed on the semiconductor substrate. A gate is then formed on the gate dielectric layer. The gate overlaps with the extended doped region.

Method for forming a high-voltage metal-oxide-semiconductor transistor device

A method of fabricating a metal gate transistor includes providing a substrate. An interlayer dielectric layer covers the substrate. A dummy gate is embedded in the interlayer dielectric layer. A high-k dielectric layer is disposed between the dummy gate and the substrate. Later, the dummy gate is removed to form a trench, and the high-k dielectric layer is exposed through the trench. After the dummy gate is removed, an ion implantation process is performed to implant fluoride ions into the high-k dielectric layer. Finally, after the ion implantation process, a metal gate is formed to fill in the trench.

A high voltage transistor structure includes a substrate. A metal gate is disposed on the substrate. At least one insulating material structure penetrates the metal gate. A metal compound layer is disposed between the metal gate and the substrate, between the insulating material structure and the substrate. The metal compound layer is a continuous structure. A gate dielectric layer is disposed under the metal compound layer and contacts the substrate.

High voltage transistor structure and method of fabricating the same

The present invention provides a novelstrain, namedstrain V3, and its use in manufacturing a pharmaceutical composition or a food composition for regulating intestinal microflora and treating and/or preventing an inflammatory diseases and/or a cancer.

strain V3 and its efficacies of intestinal microflora regulation, anti-inflammation and cancer prevention

A semiconductor structure includes at least one stacked fin structure, a gate and a source/drain. At least one stacked fin structure is located on a substrate, wherein the stacked fin structure includes a first fin layer and a second fin layer, and a fin dielectric layer is sandwiched by the first fin layer and the second fin layer. The gate is disposed over the stacked fin structure. The source/drain is disposed directly on the substrate and directly on sidewalls of the whole stacked fin structure. The present invention provides a semiconductor process formed said semiconductor structure.

Semiconductor process

The present invention relates to the use of a novelProGA28 strain, deposited in the German Collection for Microorganisms and Cell Cultures (DSMZ) under the accession number DSM 33167 on May 28, 2019. The metabolites ofProGA28 have the ability to improve sleep quality, can effectively reduce the time of rapid eye movement in the sleep phase, can reduce time to fall asleep, can increase total sleep time, and can increase the ratio of low waves during sleep so that sleep disorders and related complications, such as anxiety and immune system diseases, are treated.

Growing community of inventors

Tainan, Taiwan

Wei-Jen Chen