Mediatek Corporation

Globe Union Industrial Corporation

Taiwan Semiconductor Manufacturing Comp. Ltd.

Macronix International Co., Ltd.

Mediatek Incorporation

Everwin Pneumatic Corporation

Mstar Semiconductor, Inc.

Benq Corporation

National Taiwan Normal University

Lingsen Precision Industries, Ltd.

Wei-Jen Chen

Yen-Yu Chen

Ju-Ya Chen

Chun-Yi Tu

Yi-Shan Chiang

Ya-Chieh Lai

Tun-Yao Tsai

Chong-You Lee

Mao-Ching Chiu

Timothy Perrin Fisher-Jeffes

Chung-Liang Cheng

Wei Zhang

Yu-Chien Yang

Chang-Sheng Lee

Cheng-Yi Hsu

Yen-Shuo Chang

Wei-Chen Liao

Ming-Hsien Lin

Xiu-Sheng Li

Wei-Nan Sun

Yen-Hui Yeh

Jianxuan Du

Tsang-Yang Liu

Yi-Chen Chiang

Shuo-Nan Hung

Wei-De Wu

Chiou-Wei Tsai

Shin-Jang Shen

Ho-Chi Huang

Chi-Feng Lin

Guo-Hau Gau

Mau-Lin Wu

Chung-Bin Wu

Jiaxian Pan

Da-chun Hsing

Wanchi Lee

Tao Chen

Pei-Kai Liao

Chih-Wei Chen

Hsuan-Li Lin

Shiang-Jiun Lin

Chih-Yuan Lin

Ming-Yuan Cheng

Chien-Chung Chen

Li-Chuan Tseng

Chung-Hung Tsai

Chia-Wei Tai

Wen-Sheng Huang

Chia-Hsi Wang

Po-Ying Chen

Sheng-Wei Yeh

Li-Chun Wang

Siou-Shen Lin

Fu-Yen Kuo

Yu Chia Chen

Wei-Yu Lai

Yi-Hsuan Lin

Shih-Hung Lin

Chi-Yuan Peng

Yu-Tai Chang

Yabo Li

Chia-Yu Chang

Tun-Ping Teng

Chih-Chieh Lai

Nien-En Wu

Sung-Chiao Li

Yen-Cheng Liu

Ching-Chia Wu

Hung-Der Lin

Shih-Wei Bih

Ping-Hung Chiang

Wen Sheng Huang

Feng Chiu

Wei-Hsuan Hsieh

Wei-Yao Chen

Jianwei Zhang

Hsien-Chieh Hsiao

Ching-hsiang Liao

Yao-Huang Hsieh

Wan-Chi Lee

Faucet handle

Methods for tuning threshold voltages of fin-like field effect transistor (FinFET) devices are disclosed herein. An exemplary integrated circuit device includes a high voltage n-type FinFET, a high voltage p-type FinFET, a low voltage n-type FinFET, and a low voltage p-type FinFET. Threshold voltages of the high voltage n-type FinFET and the high voltage p-type FinFET are greater than threshold voltages of the low voltage n-type FinFET and the low voltage p-type FinFET, respectively. The high voltage n-type FinFET, the high voltage p-type FinFET, the low voltage n-type FinFET, and the low voltage p-type FinFET each include a threshold voltage tuning layer that includes tantalum and nitrogen. Thicknesses of the threshold voltage tuning layer of the low voltage n-type FinFET and the low voltage p-type FinFET are less than thicknesses of the threshold voltage tuning layer of the high voltage n-type FinFET and the high voltage p-type FinFET, respectively.

Threshold voltage tuning for fin-based integrated circuit device

A power-adjusting method for uplink transmission is provided. The power-adjusting method is applied to user equipment (UE). In response to the UE transmitting a first packet carrying a specific message to a network node, the power-adjusting method includes the UE increasing the transmission power to transmit the first packet.

Modem performance enhancement via smart transmission power distribution

A gas dispenser utilized in a deposition apparatus is provided. The gas dispenser includes a showerhead comprising a plurality of holes, and a mask layer formed on a surface of the showerhead, wherein the holes penetrate through the mask layer. A deposition apparatus using the gas dispenser is also disclosed.

Gas dispenser and deposition apparatus using the same

Faucet

Disclosed is a dehumidifier with compensation and controlling method thereof. The dehumidifier with compensation includes an environment-adjusting unit, a temperature-detecting unit, a humidity-detecting unit, a temperature-compensation unit and a control unit. The temperature-compensation unit is used to derive a plurality of compensated temperature values of the indoor space by calculating or checking a temperature reference table. The control unit is used to adjust a power of the environment-adjusting unit according to the plurality of compensated temperature values to achieve the target-moisture value.

Dehumidifier with compensation and controlling method thereof

In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a device. The device applies Nsensing beam vectors to Nreceived signals at Nantennas to obtain Nmeasurements, respectively, Nand Neach being an integer greater than or equal to 1. The device determines a beam vector based on the Nmeasurements and the Nsensing beam vectors.

Generalized beamformer

The invention provides a method for antenna selectin of a user equipment (UE). The UE may comprise a plurality of antennas. The method may comprise calculating one or more quality evaluations respectively associated with one or more first antenna subsets, and selecting one of the one or more first antenna subsets according to the one or more quality evaluations. Each antenna subset may include one or more of the plurality of antennas. Each quality evaluation may be calculated under a condition that the antenna(s) included in the associated antenna subset is (are) used to communicate.

Method for antenna selection of user equipment

An apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.

Apparatus for preventing backside peeling defects on semiconductor wafers

Handle

Growing community of inventors

Taipei, Taiwan

Wei-Jen Chen