Sensors Unlimited

Wei Huang

Wei Zhang

Namwoong Paik

Michael J Evans

Douglas Stewart Malchow

Joshua Lund

John Liobe

Paul L Bereznycky

Prabhu Mushini

Sungjin Kim

De Hsin Chang

A system includes a die with a first plurality of hybridization bumps extending therefrom, electrically connected to circuitry die. An external circuitry component with a second plurality of hybridization bumps extending therefrom, electrically connected to circuitry in the external circuitry component. The first plurality of hybridization bumps and the second plurality of hybridization bumps are pressed together for electrical communication between the die and the external circuitry component. The first plurality of hybridization bumps have a different material hardness from the second plurality of hybridization bumps. The first plurality of hybridization bumps have a different bump diameter from that of the second plurality of hybridization bumps.

Hybridization bumps for fine pitch sensor arrays

A system includes a pixel including a diffusion layer in contact with an absorption layer. The diffusion layer and absorption layer are in contact with one another along an interface that is inside of a mesa. A trench is defined in the absorption layer surrounding the mesa. An overflow contact is seated in the trench.

Pin mesa diodes with over-current protection

A system includes a pixel having a diffusion layer within a cap layer. The diffusion layer defines a front side and an illumination side opposite the front side with an absorption layer operatively connected to the illumination side as well as the diffusion and cap layers. A set of alternating oxide and nitride layers are deposited on the front side of the cap and diffusion layers.

Low capacitance photo detectors

A system includes a pixel including a diffusion layer in contact with an absorption layer. A transparent conductive oxide (TCO) is electrically connected to the diffusion layer. An overflow contact is in electrical communication with the TCO. The overflow contact can be spaced apart laterally from the diffusion layer. The pixel can be one of a plurality of similar pixels arranged in a grid pattern, wherein each pixel has a respective overflow contact, forming an overflow contact grid offset from the grid pattern.

Pin diodes with over-current protection

A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.

Pixels

A method of assembling a photodetector assembly includes depositing bumps on a read out integrated circuit (ROIC) without depositing bumps on a photodiode array (PDA). The method includes assembling the PDA and ROIC together wherein each bump electrically interconnects the ROIC with a respective contact of the PDA. A photodetector assembly includes a PDA. A ROIC is assembled to the PDA, wherein the ROIC is electrically interconnected with the PDA through a plurality of electrically conductive bumps. Each bump is confined within a respective pocket between the ROIC and a respective contact of the PDA. The disclosed methods can enable focal plane array manufacturers to achieve low-cost production of ultra-fine pitch, large format imaging arrays.

Interconnect bump structures for photo detectors

A method of forming bump structures for interconnecting components includes applying an insulating layer over a device substrate, coating the insulating layer with a dielectric material layer, forming a pattern with photolithography on the dielectric material layer, etching the dielectric material layer to transfer the pattern to the insulating layer, etching the insulating layer to form pockets in the insulating layer following the pattern, applying photolithography to and etching the dielectric material layer to reduce overhang of the dielectric material layer relative to the insulating layer, removing material from top and side walls of the pockets in the insulating layer, and depositing electrically conductive bump material in the pattern so a respective bump is formed in each pocket.

Bump structures for high density flip chip interconnection

A method of forming bump structures for interconnecting components includes dry etching a layer of insulating material to create a pattern for bump structures. A seed layer is deposited on the insulating material over the pattern. The seed layer is patterned with a photo resist material. The method also includes forming bump structures over the seed layer and the photo resist material with a plating material to form bump structures in the pattern, wherein the bump structures are isolated from one another.

Bump structures for interconnecting focal plane arrays

A photodiode includes an absorption layer. A cap layer is disposed on a surface of the absorption layer. A pixel diffusion area within the cap layer extends beyond the surface of the absorption layer and into the absorption layer to receive a charge generated from photons therefrom. A mesa trench is defined through the cap layer surrounding the pixel diffusion area, wherein the mesa trench defines a floor at the surface of the absorption layer and opposed sidewalls extending away from the surface of the absorption layer. An implant is aligned with the mesa trench and extends from the floor of the mesa trench through the absorption layer surrounding a portion of the absorption layer proximate the pixel diffusion area.

Mesas and implants in two-dimensional arrays

A photodiode includes a cap layer defining an inboard side and an outboard side. A plurality of pixels are formed in the cap layer extending from the inboard side to the outboard side. At least a portion of the cap layer is defined in between the pixels. A metal barrier is in between the pixels and is operatively connected to the inboard side of the cap layer in between the pixels to reflect light rays into the cap layer reducing the leakage of photons between the pixels.

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Plainsborough, NJ, United States of America

Wei Huang