National Pingtung University of Science & Technology

National Yunlin University of Science and Technology

Wei-Hua Lu

Yung-Chuan Chen

Ting-Lung Chiang

A heat assisted flip chip bonding apparatus includes a semiconductor assembly having a substrate and a chip, a heating source and a press and cover assembly having a cover element and press elements. The chip is disposed above the substrate and includes conductors which contact with conductive pads on the substrate. The heating source is provided to emit a heated light which illuminates the chip via an opening of the cover element. The press elements are located between the cover element and the semiconductor assembly and each includes an elastic unit and a pressing unit. Both ends of the elastic unit are connected to the cover element and the pressing unit respectively, and the pressing unit is provided to press a back surface of the chip.

Heat assisted flip chip bonding apparatus

A medical drill bit comprises an accommodating slot disposed concavely on a main body of the medical drill bit, a separate board disposed in the accommodating slot to separate the accommodating slot into a first slot and a second slot, and a lid engaging with the separate board and covering the accommodating slot. The lid and the separate board do not rotate with the main body when the main body in rotation. The accommodating uses to fill with cooling liquid which able to be pumped out from the accommodating slot, and fresh cooling liquid is able to inject into the accommodating slot for cooling the drill bit in rotation.

Medical drill bit

An electroless plating process includes providing a semiconductor substrate which has a substrate and a copper pillar disposed on the substrate; providing a tin-silver plating solution includes 0.1-50 wt % tin and 1&#xd7;10-2 wt % silver; and performing a reduction reaction, wherein the semiconductor substrate is disposed in the tin-silver plating solution for making tin and silver of the tin-silver plating solution deposit jointly on the copper pillar surface to form a tin-silver co-deposition layer. The tin-silver co-deposition layer is able to enhance the coupling strength between the copper pillar of the semiconductor substrate and the other semiconductor substrate and is also able to reduce the time and cost of the process performing tin-plating and silver-plating separately.

Electroless plating process and tin-silver plating solution therein

A pressure bandage includes a banding porting, at least one infiltration and at least one fixing member. The banding portion includes at least one recession formed in one side of the banding portion, at least one tube having first and second ends, and at least one check valve mounted in the second end of the tube. The first end of the tube is connected to the recession. The infiltration is coupled on the inner surface of the recession of the banding portion. The fixing member fixes the banding portion to a treatment part.

Negative pressure bandage

A pressure bandage includes a banding portion having opposite first and second sides. A chamber is formed in the first side of the banding portion. The second side of the banding portion includes a hole in communication with the chamber. A bladder is received in the chamber and receives a fluid. The bladder includes an infiltratable surface permeable to the fluid. The infiltratable surface of the bladder and the first side of the banding portion face the same direction. The fluid received in the bladder is permeable out of the bladder via the infiltratable surface. A control member is engaged with the hole of the banding portion and imparts a pressure to the bladder. The hole can be a screw hole, and the control member includes a knob threadedly engaged with the screw hole such that the knob is rotatable to adjust the pressure imparted to the bladder.

Growing community of inventors

Pingtung County, Taiwan

Wei-Hua Lu