Qualcomm Incorporated

Wei Hu

Dongming He

Lily Zhao

Yangyang Sun

Wen Yin

Wei Wang

Hung-Yuan Hsu

Zhe Guan

A thermal compression flip chip (TCFC) bump may be used for high performance products that benefit from a fine pitch. In one example, a new TCFC bump structure adds a metal pad underneath the TCFC copper pillar bump to cover the exposed aluminum bump pad. This new structure prevents the pad from corroding and reduces mechanical stress to the pad and underlying silicon dielectric layers enabling better quality and reliability and further bump size reduction. For example, a flip chip connection may include a substrate; a metal pad on a contact side of the substrate and a first passivation layer on the contact side of the substrate to protect the metal pad from corrosion.

Thermal compression flip chip bump for high performance and fine pitch

Disclosed are examples of integrated circuit (IC) structures and techniques to fabricate IC structures. Each IC package may include a die (e.g., a flip-chip (FC) die) and one or more die interconnects to electrically couple the die to a substrate. The die interconnect may include a pillar, a wetting barrier on the pillar, and a solder cap on the wetting barrier. The wetting barrier may be wider than the pillar. The die interconnect may also include a low wetting layer formed on the wetting barrier.

Sidewall wetting barrier for conductive pillars

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San Diego, CA, United States of America

Wei Hu