Advanced Semiconductor Engineering, Inc.

Universal Scientific Industrial (shanghai) Co., Ltd.

Universal Global Scientific Industrial Co., Ltd.

Jasper Display Corporation

Wei-Hsuan Lee

Jaw-Ming Ding

Sung-Mao Li

Chien-Yeh Liu

Wei-Yu Chen

Ian Hu

Ming-Han Wang

Yi-Ching Pao

Huan Wun Li

Yu-Chih Lee

Huang-Hua Wen

Ching-Juang Peng

Jin-Tsang Jean

Chih Sheng Yao

Wen-Tou Chiu

A semiconductor device package includes a semiconductor device, a conductive bump, a first encapsulant and a second encapsulant. The semiconductor device has a first surface, a second surface and a lateral surface. The second surface is opposite to the first surface. The lateral surface extends between the first surface and the second surface. The semiconductor device comprises a conductive pad adjacent to the first surface of the semiconductor device. The conductive bump is electrically connected to the conductive pad. The first encapsulant covers the first surface of the semiconductor device and a first portion of the lateral surface of the semiconductor device, and surrounds the conductive bump. The second encapsulant covers the second surface of the semiconductor device and a second portion of the lateral surface of the semiconductor device.

Multi-moldings fan-out package and process

A semiconductor package device includes: (1) a substrate having a top surface; (2) a passive component disposed on the substrate and having a top surface; (3) an active component disposed on the substrate and having a top surface; and (4) a package body disposed on the substrate, the package body including a first portion covering the active component and the passive component, and a second portion covering the passive component, wherein a top surface of the second portion of the package body is higher than a top surface of the first portion of the package body, and the first portion and the second portion of the package body include different materials.

Semiconductor package device and method of manufacturing the same

The present disclosure relates to a semiconductor device package and a manufacturing method thereof. The semiconductor device package includes a carrier, at least one electronic component, a first magnetic layer and a second magnetic layer. The carrier has a top surface on which the electronic component is disposed. The first magnetic layer is disposed on the top surface of the carrier and encapsulates the electronic component. The second magnetic layer is disposed on the first magnetic layer and covers a top surface and a lateral surface of the first magnetic layer. A permeability of the first magnetic layer is less than a permeability of the second magnetic layer.

Semiconductor device including electric and magnetic field shielding

A semiconductor package device includes a substrate, a passive component, an active component and a package body. The passive component is disposed on the substrate. The active component is disposed on the substrate. The package body is disposed on the substrate. The package body includes a first portion covering the active component and the passive component, and a second portion covering the passive component. A top surface of the second portion of the package body is higher than a top surface of the first portion of the package body.

A semiconductor device package comprises a substrate, a first electronic component, first and second conductive pads, a first frame board, an encapsulation layer, and a conductive layer. The substrate has a first surface and a second surface opposite to the first surface. The first electronic component, the first and second conductive pads, and the first frame board are on the first surface of the substrate. The first frame board surrounds the first electronic component and comprises a first conductive via and a second electronic component. The encapsulation layer encapsulates the first electronic component and the first frame board. The conductive layer is on the first frame board and the encapsulation layer. The first conductive via is electrically connected to the second conductive pad and the conductive layer, and the second electronic component is electrically connected to the first conductive pad.

Semiconductor device package and a method of manufacturing the same

The present disclosure relates to a semiconductor device package. The semiconductor device package includes a substrate, a semiconductor device, a plurality of electronic components, a first package body, a patterned conductive layer and a feeding element. The semiconductor device and the plurality of electronic components are disposed on the substrate. The first package body covers the semiconductor device but exposes the plurality of electronic components. The patterned conductive layer is formed on the first package body. The feeding element electrically connects the patterned conductive layer to the plurality of electronic components.

Semiconductor device packages and method of making the same

A semiconductor package includes a substrate, a set of electrical components, a stud, a tapering electrical interconnection and a package body. The electrical components are disposed on a top surface of the substrate. A bottom surface of the stud is disposed on the top surface of the substrate. A bottom surface of the electrical interconnection is disposed at a top surface of the stud. A width of the stud is greater than or equal to a width of the bottom surface of the electrical interconnection. The package body is disposed on the top surface of the substrate, and encapsulates the electrical components, the stud and a portion of the electrical interconnection. The package body exposes a top surface of the electrical interconnection.

Semiconductor device package and method of manufacturing the same

A tunable radio frequency (RF) coupler and manufacturing method thereof are provided. The tunable RF coupler includes an insulating layer, a first transmission line and a second transmission line. The second transmission line is disposed corresponding to the first transmission line and the insulating layer is disposed between the first transmission line and the second transmission line. The second transmission line includes a plurality of segments separated from each other and arranged along the extension path of the first transmission line. At least one wire is configured to establish an electrical connection between at least two segments, such that the two segments are electrically conductive to each other through the wire.

Tunable radio frequency coupler and manufacturing method thereof

An antenna module embeds front end circuitry with an antenna. Adaptive matching circuitry external to the antenna module is electrically connected between the embedded front end circuitry and the embedded antenna.

Adaptive antenna module in active IC package

A radio frequency (RF) power amplifier is disclosed. The RF power amplifier includes an adder circuit, an output-stage circuit and a differential circuit. The adder circuit has a first ratio and a second ratio, and receives a reference voltage and a feedback voltage so as to output an adder voltage after an operation, wherein the feedback voltage is a voltage with a negative temperature coefficient, and the reference voltage is sum of a first voltage with a negative temperature coefficient and a second voltage with positive temperature coefficient. The output-stage circuit is used for providing the feedback voltage. The differential circuit has a first multiplier factor, and the differential circuit makes the first multiplier factor be multiplied with the adder voltage so as to provide a voltage to the output-stage circuit. The RF power amplifier stabilizes an output current through adjusting the temperature coefficient of the reference voltage.

Electronic system, RF power amplifier and temperature compensation method thereof

A radio frequency (RF) power amplifier is disclosed. The RF radio power amplifier includes a bias current generating unit, a first impedance unit, a second impedance unit, a third impedance unit and an output stage unit. The bias current generating unit receives a reference voltage. There is a first voltage with negative temperature coefficient between the first impedance unit and the second impedance unit, and the second unit receives a ground current. There is a second voltage between the third impedance unit and the second impedance unit, and the second voltage is a partial voltage of the first voltage. The bias current generating unit outputs a bias current with positive temperature coefficient according to the second voltage. The output stage unit receives an input current. The bias current is a sum of the input current with positive temperature coefficient and the ground current.

A radio frequency (RF) power amplifier is disclosed. The power amplifier includes an output stage circuit, an exponential type bias circuit and a voltage-current transformation circuit. The output stage circuit receives a first system voltage and outputs an output current. The exponential type bias circuit receives a bias current, wherein a relationship between the bias current and output current is exponential, and when the bias current is zero current, and the output current is zero current. The voltage-current transformation circuit transforms the first system voltage into a second current so that the bias current is in proportion to the first system voltage, and thus the relationship between the output current and the first system voltage is exponential. The bias current is equal to times of the sum of the first current and the second current.

Growing community of inventors

Kaohsiung, Taiwan

Wei-Hsuan Lee