Taiwan Semiconductor Manufacturing Comp. Ltd.

Chung Yuan Christian University

Wei-Hao Lu

Yee-Chia Yeo

Wei-Yang Lee

Chien-I Kuo

LI-Li Su

Shu-Ping Lin

Po-Ting Lin

Chii-Horng Li

Li-Li Su

Yi-Fang Pai

Yu-Hsien Tu

Tuoh-Bin Ng

A method for manufacturing an integrated circuit (IC) structure is provided. The method includes: etching a first recess and a second recess in a substrate; forming a sacrificial epitaxial plug in the first recess in the substrate; forming a first epitaxial feature and a second epitaxial feature respectively in the first recess and the second recess, wherein the first epitaxial feature is over the sacrificial epitaxial plug; forming a first source/drain epitaxial structure and a second source/drain epitaxial structure over the first epitaxial feature and the second epitaxial feature respectively; forming a gate structure laterally between the first source/drain epitaxial structure and the second source/drain epitaxial structure; removing the sacrificial epitaxial plug and the first epitaxial feature to form a backside via opening exposing a backside of the first source/drain epitaxial structure; and forming a backside via in the backside via opening.

Integrated circuit structure

Integrated circuit structure and manufacturing method thereof

A thermal properties measuring device is for measuring a thermal property of an object to be measured. The thermal properties measuring device includes a heating element, a measurement window, and at least one thermometer. The heating element is configured to be heated to a first temperature. The measurement window and the heating element are disposed according to a specific geometric relationship. The measurement window is configured to provide a heat transfer path between the object and the heating element. The thermometer is configured to measure an initial temperature of the to-be-measured object, and to measure a measured temperature after the heating element is heated. The measured temperature of the object is different from the initial temperature of the object. The thermal property of the object is associated with the specific geometric relationship, the first temperature, the initial temperature, the measured temperature and an environment temperature.

Thermal properties measuring device

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a first fin structure and a second fin structure over a substrate. The semiconductor device structure also includes a gate structure over the first and second fin structure. The semiconductor device structure further includes a source/drain structure over the first and second fin structure. The source/drain structure includes a first semiconductor layer over the first fin structure and a second semiconductor layer over the second fin structure. The source/drain structure also includes a third semiconductor layer covering the first and second semiconductor layers. The third semiconductor layer has a surface with [110] plane orientation.

Semiconductor device structure and method for forming the same

A method of building a stereoscopic model with Kalman filtering (KF) is provided. The method entails capturing images of the environment with a sensing device to build the stereoscopic model and then correcting a static object and a dynamic object in the environmental images with Kalman filtering to enhance the accuracy of the stereoscopic model. The prior art is a great reduction of accuracy in simultaneous localization and mapping (SLAM) in the event of increased system variation, increased complexity, or increased involved field. The method overcomes a drawback of the prior art.

Method of building stereoscopic model with kalman filtering

Growing community of inventors

Taoyuan, Taiwan

Wei-Hao Lu