Taiwan Semiconductor Manufacturing Comp. Ltd.

Au Optronics Corporation

National Yang Ming Chiao Tung University

Wei-Han Chen

Shu-Yuan Ku

Ya-Yi Tsai

Yi-Chun Chen

Wei-Ting Guo

Shih-Yao Lin

Ching-Wen Chen

Yi-Bing Lin

Chi-Hsiang Chang

Li-Chi Peng

Shih-Hua Hsu

Ying-Hui Lai

Yen-Ling Chen

Yu-Chi Shih

Yu-Ci Chang

Tzu-I Hsieh

Meng-Zhan Lee

Jui-Yu Ho

Chi-Yao Ku

Nian-Ruei Deng

Yuan-Yao Chan

Erick Wang

Wen-Liang Chen

Tai-Hsiang Yen

Shao-Yu Chiu

Lung-Chieh Chen

Jiun-Yi Lin

Yun-Wei Lin

Szu-Chia Chen

Fung Ling Ng

Chun-Yu Chu

Chin-Cheng Wang

An optoelectronic tweezer device includes a transparent substrate, a semiconductor layer, a first electrode and a dielectric layer. The semiconductor layer is located above the transparent substrate and includes a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region. The first electrode is located on the first doping region and is electrically connected to the first doping region. The dielectric layer is located above the semiconductor layer and has a first through hole overlapping the first electrode.

Optoelectronic tweezer device and fabrication method thereof

A method of fabricating a semiconductor device is described. A substrate is provided. A plurality of fins is formed extending from the substrate, the fins including a first group of active fins arranged in an active region, and including an inactive fin having at least a portion in an inactive region, the active fins separated by first trench regions between adjacent of the active regions, the inactive fin separated from its closest active fin by a second trench region, the second trench region having a greater width than that of a trench region of the first trench regions. A dummy fin is formed on the isolation dielectric in the second trench region, the dummy fin disposed between the first group of active fins and the inactive fin. A dummy gate is formed over the fins. The gate isolation structure is disposed between the dummy fin and the inactive fin and separates regions of the dummy gate.

Semiconductor devices and methods of manufacturing thereof

A method of fabricating a semiconductor device is described. A plurality of semiconductor fins is formed in a first region on a substrate. An isolation region is formed around the plurality of semiconductor fins. Dummy fins are formed extending above the isolation region and laterally adjacent the plurality of semiconductor fins. A first etch is performed to etch the plurality of semiconductor fins such that a top surface of the plurality of semiconductor fins has a same height as a top surface of the isolation region. A second etch is performed selectively etching the isolation region to form a first recess in the isolation region laterally adjacent the semiconductor fins. A third etch is performed selectively etching the plurality of semiconductor fins to remove the plurality of semiconductor fins and to etch a second recess through the isolation region into the semiconductor substrate.

An IoT system includes a computing module for controlling an integral function of the system and including an analysis unit and a machine learning unit. The analysis unit is capable of operational analysis and creating a predictive model and creating a predictive model according to the data analyzed. The machine learning unit has an algorithm function to create a corresponding learning model. An IoT module is electrically connected to the computing module to serve as an intermediate role. At least one detection unit is electrically connected to the IoT module and disposed in soil to detect data of environmental and soil conditions and sends the data detected to the computing module for subsequent analysis.

Internet of things system with prediction of farmland soil status and method for creating model thereof

Growing community of inventors

Hsinchu, Taiwan

Wei-Han Chen