University of Electronic Science and Technology of China

Institute of Electronic and Information Engineering of Uestc in Guangdong

Wei Gao

Bo Zhang

Zehong Li

Jinping Zhang

Min Ren

Yuci Lin

Yumeng Zhang

Cong Di

Chi Xie

Jingzhi Xiong

Zhiheng Su

A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.

Trench MOS device with improved single event burn-out endurance

A junction termination with an internal field plate, the field plate structure and the junction termination extension region are folded inside the device to make full use of the thickness of the drift region in the body, thereby reducing the area of the termination and relieving the electric field concentration at the end of the PN junction. The breakdown position is transferred from the surface into the body of the original PN junction, and the withstand voltage of termination can reach to the breakdown voltage of the parallel plane junction. Under such design, a smaller area can be obtained than that of the conventional structure at the same withstand voltage.

Folded termination with internal field plate

Growing community of inventors

Chengdu, China

Wei Gao