Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Da Chen

Cheng-Yi Huang

Chih-Hsien Hsu

Chien-Liang Chen

Chia-Chi Chung

Yung-yao Lee

Chun Yan Chen

Shih-Tsung Chen

Yu-Hsiang Lin

Chien-Yu Wang

Chien-Hua Tseng

Hsing-Hsiang Wang

Chien-Sheng Wu

Miau-Shing Tsai

Tom Peng

Ya-Ping Su

Tien-Chih Huang

Ching-Horng Chen

Han-Wen Fung

Yu-Ning Cheng

P Y Chiu

A cantilever for gas flow direction control configured to support an electrode housing bowl in an associated etch process chamber. The cantilever may have a cross-section that is circular, elliptical, or airfoil shaped. The shape of the cantilever induces the flow of gas and etch products within the chamber around the cantilever, reducing turbulence around the edge of a wafer.

Cantilever with etch chamber flow design

In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.

Metal etching with in situ plasma ashing

A method for making a semiconductor device is disclosed. A substrate comprising semiconductor device elements is provided. A top conductive pad and an anti-reflective coating are patterned over the substrate. The anti-reflective coating is disposed on the top conductive pad. At least one passivation film is formed over the substrate and the anti-reflective coating. The at least one passivation film and the anti-reflective coating are etched to form a trench therein so as to expose a portion of the top conductive pad.

Method of forming a semiconductor device comprising top conductive pads

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Hsin-Chu, Taiwan

Wei-Da Chen