1. Qualcomm Incorporated (39 from 41,326 patents)

2. Industrial Technology Research Institute (6 from 9,138 patents)

3. Hefechip Corporation Limited (4 from 27 patents)

1. 12108684 - Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the same

2. 11538986 - Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory device

3. 11456411 - Method for fabricating magnetic tunneling junction element with a composite capping layer

4. 11342496 - Semiconductor memory structure with magnetic tunneling junction stack and method for forming the same

5. 10868238 - Magnetic tunnel junction integration without patterning process

6. 10811068 - Varying energy barriers of magnetic tunnel junctions (MTJs) in different magneto-resistive random access memory (MRAM) arrays in a semiconductor die to facilitate use of MRAM for different memory applications

7. 10740017 - Dynamic memory protection

8. 10693432 - Solenoid structure with conductive pillar technology

9. 10614942 - Inductors formed with through glass vias

10. 10608174 - Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density

11. 10582609 - Integration of through glass via (TGV) filter and acoustic filter

12. 10534047 - Tunnel magneto-resistive (TMR) sensors employing TMR devices with different magnetic field sensitivities for increased detection sensitivity

13. 10460817 - Multiple (multi-) level cell (MLC) non-volatile (NV) memory (NVM) matrix circuits for performing matrix computations with multi-bit input vectors

14. 10446743 - Double-patterned magneto-resistive random access memory (MRAM) for reducing magnetic tunnel junction (MTJ) pitch for increased MRAM bit cell density

15. 10431278 - Dynamically controlling voltage for access operations to magneto-resistive random access memory (MRAM) bit cells to account for ambient temperature