Micron Technology Incorporated

Wei Ching Huang

Matthew N Rocklein

Sanjeev Sapra

Devesh Dadhich Shreeram

Sevim Korkmaz

An-Jen B Cheng

Kangle Li

Ping-Cheng Hsu

A DRAM capacitor may include a first capacitor electrode, a capacitor dielectric adjacent to the first capacitor electrode, and a second capacitor electrode adjacent to the capacitor dielectric. The first capacitor electrode may include a lower portion, an upper portion, and a step transition between the lower portion and the upper portion, a width of the upper portion of the first capacitor electrode at the step transition is less than a width of the lower portion of the first capacitor electrode at the step transition. Semiconductor devices, systems, and methods are also disclosed.

Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methods

Growing community of inventors

Central Taichung, Taiwan

Wei Ching Huang