Lite-on Technology Corporation

Industrial Technology Research Institute

Realtek Semiconductor Inc.

Other

Taiwan Semiconductor Manufacturing Comp. Ltd.

Macronix International Co., Ltd.

Lite-on It Corporation

Opto Tech Corporation

National Taiwan University

Wei-Chih Lin

Yung-Chih Chen

Jung-Yu Li

Yi-Ping Lin

Shih-Pu Chen

Jui-Te Wei

Po-An Chen

Lian-Yi Cho

Chuan Lee

Cheng-Chung Hsu

Chia-Yuan Lin

Meng-Che Lin

Chih-Chien Lu

Song-Bor Lee

Cheng-Chien Li

Chien-Feng Chang

Ching-Kun Huang

Tsung-Huai Lee

Chen-I Kuo

Fu-Ji Tsai

Ying-Jen Lai

Chi-Feng Chiang

Yoshio Hayashi

Yu-Hsuan Lin

Chih-Hao Lin

Yin-Fu Huang

Din-Ping Tsai

Chih-Chia Hsu

Bo-Jui Huang

An-Hung Lin

Yuh-Wey Lin

Chih-Chieh Yu

Hsun-Hao Chang

Han-Lun Wang

Wei-Tien Chang

Xin-You Chen

Ling-Hao Yu

Chun-Chu Uang

Liang-Tang Chen

Wen-Chun Hsu

A display control chip includes a first memory and a computing circuit. The first memory is configured to store a plurality of character images respectively corresponds to a plurality of characters of a character encoding format. The computing circuit is coupled with the first memory, and is configured to receive first update data generated by encoding input data according to the character encoding format, and is configured to use the first update data to update text data in a second memory. When the computing circuit reads the text data in the second memory, the computing circuit is configured to: search among the plurality of character images to find a plurality of target images corresponding to the text data; and output first display data according to the plurality of target images, in which the first display data is for generating a first display picture including the plurality of target images.

Display control chip, operating method thereof and display system comprising the same

A display system includes a display device. The display device is arranged to receive a video signal and a control signal from a host system, and includes a processing circuit and a display screen, wherein the processing circuit is arranged to process an original frame corresponding to the video signal according to the control signal, to generate a magnified frame, and generate a processed frame according to the magnified frame and the original frame, and the display screen is coupled to the processing circuit, and is arranged to display the processed frame.

Control method for magnifying display screen and associated display system

A measurement system for measuring a motion picture response time (MPRT) of a liquid crystal display (LCD) has a computer and a measurement device. The computer controls a display panel of the LCD to switch between a plurality of different gray levels. The measurement device measures variations of brightness of the display panel when the display panel switches its gray level. The computer obtains at least a gray level response time (GLRT) normalized curve according to results of measuring the variations of the brightness. The computer integrates the at least a GLRT normalized curve to obtain at least an MPRT normalized curve, obtains at least a time interval of the at least an MPRT normalized curve, and calculates an average of the at least a time interval to obtain the MPRT of the LCD.

System and method for measuring a motion picture response time of a liquid crystal display

A processor is configured to be coupled to a display panel. The processor includes a first storage circuit, a converter circuit, and an overdrive circuit. The first storage circuit is configured to store input video data. The converter circuit is configured to receive the input video data, and adjust a frame rate of the input video data, to generate adjusted video data. The overdrive circuit is configured to perform an overdrive process according to the adjusted video data, to generate a driving signal, such that the display panel displays a video according to the adjusted video data and the driving signal.

Processor and display method

The disclosure provides a semiconductor device having a separate active region and a method of fabricating the same. The semiconductor device includes a substrate, a plurality of isolation islands, a source region, and a drain region. The substrate includes a first active region, a second active region, and a plurality of separate active regions. The separate active regions are connected to the first active region and the second active region. The separate active regions and the isolation islands are alternately disposed. The gate structure includes a body portion and a plurality of extensions. The body portion disposed on a portion of the first active region. The extensions are coupled to the body portion and extend from the body portion to the isolation islands. The source region and the drain region are respectively located in the substrate in the first active region and the second active region.

Semiconductor device with separate active region and method of fabricating the same

A measurement system has a photosensitive element, an analog-to-digital converter (ADC), a reference voltage source, and a transmission interface. The photosensitive element senses variations of brightness of a display panel of a liquid crystal display (LCD) to generate a voltage signal. The ADC converts the voltage signal into a digital signal. The reference voltage source provides a reference voltage to the ADC to drive the ADC to dynamically adjust a convertible voltage range of the ADC for any voltage inputted to the ADC according to the reference voltage. The transmission interface transmits the digital signal to a computer to trigger the computer to calculate a response time of the LCD according to the digital signal.

Measurement system and method for measuring a response time of a liquid crystal display

High-voltage transistor devices with two-step field plate structures and methods of fabricating the transistor devices are provided. An example high voltage transistor device includes: a gate electrode disposed over a substrate between a source region and a drain region, a first film laterally extending from over the gate electrode to over a drift region laterally arranged between the gate electrode and the drain region, a second film laterally extending over a portion of the drift region adjacent to the drain region and away from the gate electrode, and a field plate laterally extending from over the first film to over the second film. A first thickness vertically from a top surface of the gate electrode to a bottom surface of the field plate is smaller than a second thickness vertically from a top surface of the portion of the drift region to the bottom surface of the field plate.

High-voltage transistor devices with two-step field plate structures

An OSD driving circuit is embedded in the display for controlling OSD operations of the display. The OSD driving circuit has a signal port and a microprocessor. The signal port is coupled to a signal channel for receiving an OSD opening command and for receiving an OSD execution command from a host via the signal channel. The OSD execution command is generated in response to operations of a cursor device of the host, and movement of a cursor displayed on a display panel of the display is controlled by the cursor device. The microprocessor is coupled to the signal port for driving the display panel to display an OSD menu according to the OSD opening command, and for executing OSD operations of the display according to the OSD execution command and coordinates of the cursor.

On-screen-display (OSD) driving circuit and method for controlling OSD operations of a display by using an external cursor device

The present invention relates to a lamp structure, which comprises a light guide plate, a lamp plate, and a lamp housing. The light guide plate includes an inner loop, an outer loop, and an annular tortuous structure. The annular tortuous structure includes a plurality of top recesses and a plurality of bottom recesses. The plurality of top recesses and the plurality of bottom recesses are interlaced to give a continuous concave-convex structure. The lamp plate is disposed inside the inner loop. The lamp housing includes a top housing member and a bottom housing member. The top and bottom housing members are located on both sides of the lamp plate and disposed on the two loop openings of the inner loop and opposing to each other. Thereby, the light of the lamp plate illuminates outward via the shape and structure of the light guide plate.

Lamp structure

A lateral diffused metal oxide semiconductor (LDMOS) transistor and a manufacturing method thereof are provided. A deep well region is disposed in a substrate. An isolation structure is disposed in the substrate to define a first active area and a second active area. A well region is disposed in the deep well region in the first active area. A gate is disposed on the substrate in the first active area. A gate dielectric layer is disposed between the gate and the substrate. A first doped region is disposed in the well region in the first active area and located at one side of the gate. A second doped region is disposed in the deep well region in the second active area. A conductive structure is disposed on the isolation structure, surrounds the second doped region and is connected to the gate.

Lateral diffused metal oxide semiconductor transistor and manufacturing method thereof

Light fixture

Disclosed herein is a method of processing a device, comprising providing a substrate having a buffer layer disposed on a back side and forming an outer protection layer over the back side of the buffer layer, forming a thermal layer on the back side of the outer protection layer and heating the substrate through the thermal layer and the back side of the outer protective layer. A back side protection layer may be formed on the back side of the buffer layer. The thermal layer has a thermal emissivity coefficient of about 0.7 or greater and a thickness greater than a roughness of the back side of the outer protection layer. The back side protection layer is an oxide with a thickness between about 20 angstroms and about 50 angstroms. The outer protection layer is a nitride with a thickness between about 50 angstroms and about 300 angstroms.

Wafer back side processing structure and apparatus

A pico projection fixing module includes a bracket main body, at least two collimator lenses, and at least two color light sources. The bracket main body includes an upper part, a lower part, a connecting part and at least two assembling seats. The upper part and the lower part are located at bilateral sides of the connecting part. Each of the assembling seats includes an opening and a clamping part. The opening is formed on the connecting part. The clamping part is disposed on the upper part and the lower part. The at least two collimator lenses are installed on the connecting part and corresponded to the corresponding openings. The at least two color light sources are installed on the corresponding clamping parts and aligned with the corresponding collimator lenses. The clamping parts corresponding to the assembling seats are separated from each other.

Pico projection fixing module

An optical apparatus comprises a fixing base; a plurality of light emitting units and a plurality of holders. The light emitting units emits a plurality of light beams and each light emitting unit has a holding portion. Each holder has an accommodating indentation for accommodating the corresponding light emitting unit. The accommodating indentation exposes the holding portion of the corresponding light emitting unit so that a jig holds the exposed holding portion and adjusts the position of the holder and the light emitting unit before the holder is fixed to the fixing base and then adjusts the position of the light emitting unit within the holder after the holder is fixed to the fixing base. And then the light emitting unit is fixed to the holder.

Optical apparatus having light sources and a plurality of holders for holding the light sources

A pico projection fixing module includes a bracket main body, plural color light sources, and plural collimator lenses. The bracket main body includes plural assembling seats. The plural assembling seats are arranged side by side. Each of the plural assembling seats includes a first assembling part and a second assembling part beside the corresponding first assembling part. The plural color light sources are installed on the first assembling parts of the plural assembling seats, respectively. The plural collimator lenses are installed on the second assembling parts of the plural assembling seats and aligned with the plural color light sources, respectively. Moreover, plural color light beams from the plural color light sources are projected out through the corresponding collimator lenses. Moreover, plural concave spaces are arranged around bottoms of the plural second assembling parts, respectively, wherein the plural concave spaces are separated from each other.

Growing community of inventors

Hsinchu, Taiwan

Wei-Chih Lin