Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Chih Lai

Li-Jui Chen

Bo-Tsun Liu

Han-Lung Chang

Po-Chung Cheng

Chen-Hua Douglas Yu

Der-Chyang Yeh

Wei-Cheng Wu

Shang-Chieh Chien

Cheng-Hsien Hsieh

Chi Ming Yang

Li-Han Hsu

Tsung-Shu Lin

Yu-Chen Hsu

Chien-Chia Chiu

Chuei-Tang Wang

Anthony Yen

Jeng-Horng Chen

Shinn-Sheng Yu

Chih-Tsung Shih

Chung-Hao Tsai

Tzung-Chi Fu

Chia-Chen Chen

Chieh-Jen Cheng

Li-Kai Cheng

Shun-Jung Chen

A method of forming an integrated circuit package includes following operations. A padding layer is formed on a portion of a carrier. A first semiconductor die is placed on the padding layer and a second semiconductor die is placed on the carrier. The first semiconductor die and the second semiconductor die are encapsulated with a first encapsulation layer. A first redistribution layer structure is formed over the first semiconductor die, the second semiconductor die and the first encapsulation layer. A third semiconductor die is placed on the first redistribution layer structure. The third semiconductor die is encapsulated with a second encapsulation layer. A second redistribution layer structure is formed over the third semiconductor die and the second encapsulation layer. The carrier is debonded. The padding layer is removed, and therefore, a recess is formed in the first encapsulation layer.

Method of forming an integrated circuit package having a padding layer on a carrier

A droplet generator for an extreme ultraviolet imaging tool includes a reservoir for a molten metal, and a nozzle having a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. A gas inlet is connected to the nozzle, and an isolation valve is at the second end of the nozzle configured to seal the nozzle droplet generator from the ambient.

Droplet generator and method of servicing extreme ultraviolet imaging tool

A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.

Apparatus and method for generating extreme ultraviolet radiation

A semiconductor package includes a circuit substrate, a die, a frame structure, and a heat sink lid. The die is disposed on the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies.

Semiconductor package and manufacturing method thereof

A semiconductor package includes a circuit substrate, a die, a frame structure, a heat sink lid and conductive balls. The die is disposed on a front surface of the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the front surface of the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies. The conductive balls are disposed on the opposite surface of the circuit substrate and electrically connected with the die through the circuit substrate.

A method for performing a lithographic process over a semiconductor wafer is provided. The method includes coating a photoresist layer over a material layer which is formed on the semiconductor wafer in a track apparatus. The method further includes transferring the semiconductor wafer from the track apparatus to an exposure apparatus. The method also includes measuring a height of the photoresist layer before the removal of the semiconductor wafer from the track apparatus. In addition, the method includes measuring height of the material layer in the exposure apparatus. The method also includes determining a focal length for exposing the semiconductor wafer according to the height of the photoresist layer and the height of the material layer.

Method for lithographic process and lithographic system

A method of controlling an excitation laser includes detecting, at a droplet generator, a first signal of radiation scattered by a given target droplet irradiated by a first radiation source at a first position. The method of controlling the excitation laser further includes detecting, at the droplet generator, a second signal of radiation scattered by the given target droplet irradiated by a second radiation source at a second position a fixed distance away from the first position, and determining a speed of the given target droplet based on a time lag between the detecting of the first signal and the detecting of the second signal. The method further includes controlling a trigger time for triggering an excitation pulse for heating the given target droplet based on the determined speed of the given target droplet.

Systems and methods for monitoring the focus of an EUV lithography system are disclosed. Another aspect includes a method having operations of measuring a first shift value for a first patterned set of sub-structures of a focus test structure on a wafer and measuring a second shift value for a second patterned set of sub-structures of the test structure on the wafer. The test structure may be formed on the wafer using asymmetric illumination, with the first patterned set of sub-structures having a first pitch and the second patterned set of sub-structures having a second pitch that is different from the first pitch. The method may further include determining a focus shift compensation for an illumination system based on a difference between the first shift value and the second shift value.

EUV focus monitoring systems and methods

A semiconductor device includes a semiconductor substrate, a dielectric layer, a passivation layer, a protective layer, a post-passivation interconnect (PPI) structure, and a shielding layer. The semiconductor substrate has electrical circuitry. The dielectric layer is formed on the semiconductor substrate. The passivation layer is formed on the dielectric layer. The first protective layer is formed on the passivation layer. The PPI structure is disposed on the first protective layer and has a signal line and a ground line. The shielding layer is disposed over the semiconductor substrate and between the signal line and the electrical circuitry. The shielding layer is substantially equi-potentially connected to the ground line of the PPI structure.

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Changhua County, Taiwan

Wei-Chih Lai