Taiwan Semiconductor Manufacturing Comp. Ltd.

National Yang Ming Chiao Tung University

Wei-Chih Hsieh

Shang-Chih Hsieh

Yu-Lun Ou

Wei Hwang

Chih-Chiang Chang

Ming-Hung Chang

Chun-Yi Wu

Chang-Yu Wu

Yen-Pin Chen

Chung-Hsing Wang

Tzu-Hen Lin

Shi-Wen Chen

Florentin Dartu

For a method of manufacturing a semiconductor device, a corresponding layout diagram is stored on a non-transitory computer-readable medium, the layout diagram being arranged relative to first and second perpendicular directions, the layout diagram including cells such that, for a subset of the cells, each subject one of the cells (subject cell) in the subset has a neighborhood including first and second neighbor cells on corresponding first and second sides of the subject cell relative to the first direction. The method includes: for each subject cell in the subset, generating a sidefile which represents neighborhood-specific proximity-effect information. For each cell in the subset of the cells, the generating a sidefile includes populating the sidefile with a first neighbor-specific proximity-effect (NSPE) parameter corresponding to an inter-cell proximity-effect induced by the first neighbor cell and a second NSPE parameter corresponding to an inter-cell proximity-effect induced by the second neighbor cell.

Method of generating netlist including proximity-effect-inducer (PEI) parameters

A device is disclosed and includes a first transistor, a second transistor, and a first current limiter. First terminals of the first and second transistors are coupled to an output terminal, and gate terminals of the first and second transistors receive a first input signal. A first terminal of the first current limiter is coupled to a second terminal of the first transistor to output a first output signal, and a second terminal of the first current limiter is coupled to a second terminal of the second transistor to output a second output signal. A third output signal at the output terminal has a logic value different from that of the first input signal.

Level conversion device and method

A device is disclosed and includes a first switch, a second switch, and a selector. The first switch outputs a first output signal at a first terminal thereof. The second switch is coupled to the first switch at a second terminal of the first switch. The second switch outputs a second output signal at the second terminal of the first switch in response to an input signal. The selector outputs, in response to the input signal received at two terminal of the selector, one of the first and second output signals as a third output signal. The third output signal has a logic value different from the input signal.

A device is disclosed that includes a level shifter and an output stage. The level shifter is configured to generate a first output signal based on a logic value of a first input signal. The output stage is configured to receive the first output signal transmitted according to the logic value of the first input signal, and to generate a second output signal. The second output signal has a logic value that is different from a logic value of the first output signal, and the second output signal and the first input signal has a same logic value.

A device is disclosed that includes a level shifter and an output stage. The level shifter is configured to output a first output signal at a first output terminal in response to a first input signal having a first logic level, and is configured to output a second output signal at a second output terminal in response to the first input signal having a second logic level. The output stage is configured to receive and adjust the first output signal or the second output signal that is selected in response to the first input signal, and configured to generate a third output signal, wherein the third output signal has a logic value that is the same as a logic value of the first output signal or the second output signal.

A device is disclosed that includes a level shifter and a selector. The level shifter is configured to output a first output signal at a first output terminal in response to a first input signal having a first logic level, and is configured to output a second output signal at a second output terminal in response to the first input signal having a second logic level. The selector is coupled to the first output terminal and the second output terminal. The selector is configured to pass one of the first output signal or the second output signal in response to the first input signal, to an output of the selector.

A device is disclosed that includes a level shifter and an output stage. The level shifter includes a first current limiter. The level shifter is configured to generate a first output signal at a first terminal of the first current limiter, and to generate a second output signal at a second terminal of the first current limiter according to a first input signal. The output stage is configured to adjust a voltage swing of a selected one of the first output signal and the second output signal.

A device is disclosed that includes a level shifter and a selector. The level shifter includes a first current limiter. The level shifter is configured to generate a first output signal at a first terminal of the first current limiter, and to generate a second output signal at a second terminal of the first current limiter according to a first input signal. The selector configured to selectively transmit one of the first output signal and the second output signal according to the first input signal.

Among other things, one or more techniques for enhancing device (e.g., transistor) performance are provided herein. In one embodiment, device performance is enhanced by forming an extended dummy region at an edge of a region of a device and forming an active region at a non-edge of the region. Limitations associated with semiconductor fabrication processing present in the extended dummy region more so than in non-edge regions. Accordingly, a device exhibiting enhanced performance is formed by connecting a gate to the active region, where the active region has a desired profile because it is comprised within a non-edge of the region. A dummy device (e.g., that may be less responsive) may be formed to include the extended dummy region, where the extended dummy region has a less than desired profile due to limitations associated with semiconductor fabrication processing, for example.

Device performance enhancement

Some embodiments relate to a flip-flop having a data input terminal, a data output terminal and a clock terminal. The flip-flop includes a master latch, a slave latch, and an isolation element coupled between the master latch output and slave latch. The isolation element is arranged to isolate capacitive loading seen by the output of the master latch that comes from the slave latch. In some embodiments, the master latch includes one or more drive enhancement elements on its feedforward and feedback paths. The slave latch can also include one or more drive enhancement elements on its feedforward and feedback paths. These drive enhancement elements, particularly in combination with the isolation element, may help to reduce the setup and hold times and enhance meta-stability resistance of the flip-flop relative to conventional implementations. Other embodiments are also disclosed.

Meta-hardened flip-flop

A fully on-chip temperature, process, and voltage sensor includes a voltage sensor, a process sensor and a temperature sensor. The temperature sensor includes a bias current generator, a ring oscillator, a fixed pulse generator, an AND gate, and a first counter. The bias current generator generates an output current related to temperature according to the operating voltage of chip. The ring oscillator generates an oscillation signal according to the output current. The fixed pulse generator generates a fixed pulse signal. The AND gate is connected to the ring oscillator and the fixed pulse generator for performing a logic AND operation on the oscillation signal and the fixed pulse signal, and generating a temperature sensor signal.

Fully-on-chip temperature, process, and voltage sensor system

A solar power management system is provided for managing electric energy conversion by a photovoltaic cell module, supplying the converted electric energy to an external load, and storing the converted electric energy in a battery. The solar power management system comprises a multiphase maximum power tracking (MPT) module, a charging circuit, and a voltage conversion module. The multiphase MPT module regulates output current of the photovoltaic cell module to output maximum power within the high limit thereof and obtain improved solar energy conversion efficiency. The voltage conversion module converts the electric energy generated by the photovoltaic cell module into different voltage formats, such as 5.6V DC, 1.0V DC, 0.6&#x2dc;0.3V DC low voltage, or &#x2212;1.2V DC negative voltage, to meet different external load requirements. The solar power management system has simple circuitry and can be configured as a system on chip (SoC) at reduced cost while provides very wide applications.

Solar power management system

A charge pump is disclosed for amplifying an input voltage received at an input end and outputting the amplified voltage at an output end as an output voltage. The charge pump includes a plurality of source/drain coupling transistors for serving as charging capacitors, and a plurality of cascode-connected transistors being symmetrically connected to between the input end and the output end. The charge pump further includes a plurality of diode-connected transistors to protect the source/drain coupling transistors against breakdown during the course of charge transfer and to speed up the charge transfer.

Growing community of inventors

Taoyuan, Taiwan

Wei-Chih Hsieh