International Business Machines Corporation

United Microelectronics Corp.

Agency for Science, Technology and Research

Agency for Science, Technology

Wei Cheng

Chuan Yang

James L Hedrick

Yi Yan Yang

Jeannette M Garcia

Zhen Chen

Dylan J Boday

Rudy J Wojtecki

Nathaniel H Park

Shen-De Wang

Cheng-Yuan Hsu

Amanda Catherine Engler

Chi Ren

Daniel Joseph Coady

Ching Hwa Tey

Duan Quan Liao

James Lupton Hedrick

Yikun Chen

Ching-Long Tsai

Pei Yun Teo

YiYan Yang

Mareva B Fevre

Xin Ding

Robert J Ono

Victor W L Ng

Ashlynn L Z Lee

Yi-Yan Yang

Yi-Shan Chiu

Ashlynn Lingzhi Lee

Xiao Zhong Zhu

Zhaobing Li

Nor Lizawati Ibrahim

Ming Sheng Xu

Kok Wun Tan

Ping Liu

A semiconductor memory structure includes a substrate having a device cell region and a contact forming region in proximity to the device cell region. A memory cell transistor is disposed within the device cell region. The memory cell transistor includes a gate and a charge storage structure between the gate and the substrate. The gate includes an extended portion within the contact forming region. A first spacer is disposed on a sidewall of the gate within the device cell region. A second spacer is disposed on a sidewall of the extended portion of the gate within the contact forming region. The second spacer is higher than the first spacer.

Semiconductor memory structure and fabrication method thereof

The present invention mainly relates to a polymer for delivery of biologically active materials, a complex and a method of synthesis thereof. The polymer comprises a poly(ethylene imine) and at least one monomer, each monomer comprising a modified sugar moiety, preferably galactose, comprising a sulphur atom or a nitrogen atom and a chemical moiety comprising a terminal epoxide for linking the polyethylene imine to the monomer, wherein the sulphur atom or the nitrogen atom links the modified sugar moiety to the chemical moiety. The biologically active material is preferably a gene, siRNA, mRNA or plasmid DNA. Further disclosed is the medical use of said complex in treating a disease caused by a genetic disorder, for example cancer.

Polymer for delivery of biologically active materials

Embodiments of the invention are directed to a macromolecular chemotherapeutic. A non-limiting example of the macromolecular chemotherapeutic includes a block copolymer. The block copolymer can include a water-soluble block, a cationic block, and a linker, wherein the linker is connected to the water-soluble bock and the charged block.

Macromolecular chemotherapeutics

Gel-forming block copolymers were prepared comprising i) a central hydrophilic block consisting essentially of a divalent poly(ethylene oxide) chain and ii) two peripheral monocarbonate or polycarbonate hydrophobic blocks linked to the central block by linking groups bearing one or more hydrogen bond forming *&#x2014;N(H)&#x2014;* groups. The hydrophobic blocks comprise one or more vitamin-bearing subunits. The gel-forming block copolymers can be used to prepare various biodegradable and/or biocompatible hydrogel and organogel drug compositions, in particular antimicrobial and/or anti-tumor drug compositions. The hydrogel compositions have utility in depot injections for drug delivery. The hydrogen bonding *&#x2014;N(H)&#x2014;* group(s) provide longer in vivo lifetime of the hydrogel before degradation and a more prolonged and controlled release rate of a hydrophobic drug compared to similar hydrogels prepared from poly(ethylene glycol).

Vitamin functionalized gel-forming block copolymers for biomedical applications

A method for manufacturing a semiconductor device includes the following steps. At first, two gate stack layers are formed on a semiconductor substrate, wherein each of the gate stack layers includes a top surface and two side surfaces. A conductive material layer is deposited to conformally cover the top surface and the two side surfaces of each of the gate stack layers. Then, a cap layer is deposited to conformally cover the conductive material layer. Finally, the cap layer and the conductive material layer above the top surface of each of the gate stack layers are removed to leave the cap layer adjacent to the two side surfaces of each of the gate stack layers and covering a portion of the conductive material layer.

Semiconductor device and manufacturing method thereof

Antimicrobial, non-hemolytic cationic polyamines were prepared by treating partially N-acylated polyethylenimines and/or partially oxidized polyethylenimines with a protic acid. The cationic polyamines can have a linear or branched polyethylenimine backbone structure. Preferably, the cationic polyamines comprise pendant urea groups, which can be introduced via a cyclic carbonate comprising a pendant urea group. The cationic polyamines can be active against a tuberculosisat low concentration. The cationic polyamines are also effective against Gram-negativeand, Gram-positive, and fungusin solution and in the form of a film.

Antimicrobial cationic polyamines

A semiconductor process includes the following steps. A first gate is formed on a substrate, wherein the first gate includes a stacked gate on the substrate and a cap on the stacked gate. A spacer material is formed to conformally cover the first gate and the substrate. The spacer material is etched to form a spacer on a side of the first gate and a block on the other side of the first gate corresponding to the side. A material covers the substrate, the block, the first gate and the spacer, wherein the top surface of the material is a flat surface. The block, the spacer and the material are pulled down with the same pulling selectivity so that an assisting gate is formed from the block and a selective gate is formed from the spacer.

Semiconductor process

A branched polyamine comprises about 8 to about 12 backbone tertiary amine groups, about 18 to about 24 backbone secondary amine groups, a positive number n' greater than 0 of backbone terminating primary amine groups, and a positive number q greater than 0 of backbone terminating carbamate groups of formula (2): wherein (n&#x2032;+q) is a number equal to about 8 to about 12, the starred bond of formula (2) is linked to a backbone nitrogen of the branched polyamine, L&#x2032; is a divalent linking group comprising 3 to 30 carbons, and q/(n&#x2032;+q)&#xd7;100% equals about 9% to about 40%.

Low molecular weight branched polyamines for delivery of biologically active materials

A layout structure for memory devices includes a plurality of first gate patterns, a plurality of first landing pad patterns, a plurality of dummy patterns, a plurality of second landing pad patterns, and a plurality of second gate patterns. The first landing pad patterns are parallel with each other and electrically connected to the first gate patterns. The dummy patterns and the first landing pad patterns are alternately arranged, and the second landing pad patterns are respectively positioned in between one first landing pad pattern and one dummy pattern. The second gate patterns are electrically connected to the second landing pad patterns.

Semiconductor structure and layout structure for memory devices

A method of fabricating a semiconductor device includes the following steps. At least a first gate stack layer and at least a second gate stack layer protruding from a conductive layer on a substrate are provided. Subsequently, two spacers and a protective layer are formed on the conductive layer, and the two spacers and the protective layer jointly surround the protruded first gate stack layer and the protruded second gate stack layer. The two spacers and the protective layer are used as a mask to remove a part of the conductive layer. Afterwards, the two spacers and the protective layer are removed.

Method of fabricating semiconductor device

A floating gate forming process includes the following steps. A substrate containing active areas isolated from each other by isolation structures protruding from the substrate is provided. A first conductive material is formed to conformally cover the active areas and the isolation structure. An etch back process is performed on the first conductive material to respectively form floating gates separated from each other in the active areas.

Floating gate forming process

A branched polyamine comprises about 45 to about 70 backbone tertiary amine groups, about 90 to about 140 backbone secondary amine groups, a positive number n' greater than 0 of backbone terminating primary amine groups, and a positive number q greater than 0 of backbone terminating carbamate groups of formula (2): wherein (n&#x2032;+q) is a number equal to about 45 to about 70, the starred bond of formula (2) is linked to a backbone nitrogen of the branched polyamine, L&#x2032; is a divalent radical comprising 3 to 30 carbons, and q/(n&#x2032;+q)&#xd7;100% equals about 9% to about 47%.

Branched polyamines for delivery of biologically active materials

Growing community of inventors

Singapore, Singapore

Wei Cheng