United Microelectronics Corp.

Silverstone Technology Co., Ltd.

Wei-Cheng Hung

Yu-Jen Liu

Hung-Kang Lien

The invention provides a semiconductor structure, the semiconductor structure includes a substrate, a transistor disposed on the substrate, wherein the transistor comprises a gate structure, a source and a drain, and the gate structure of the transistor located on the substrate and extending along a first direction, and a plurality of supporting patterns located in the gate structure of the transistor, wherein the plurality of supporting patterns are separated from each other and arranged along a second direction, wherein the second direction is perpendicular to the first direction, and wherein at least four supporting patterns of the plurality of supporting patterns constitute a supporting pattern dashed line, wherein the supporting pattern dashed line extends along the second direction.

Semiconductor structure

The invention provides a semiconductor structure, the semiconductor structure includes a substrate, a gate structure which extends along a first direction, and a plurality of supporting patterns which are separated from each other and arranged along a second direction which is perpendicular to the first direction.

Semiconductor structure and forming method thereof

The invention provides a method for reducing mismatch of semiconductor device patterns, which comprises the following steps: defining an initial lithography area which partially overlaps a target gate structure, a first gate structure and a second gate structure; if a length and a width of the target gate structure are smaller than a preset channel length and a preset channel width respectively, adjusting and reducing the area of the initial lithography area to define a second lithography area. The second lithography area partially overlaps with the target gate structure but does not overlap with the first gate structure and the second gate structure, and the second lithography region is defined as the active area.

Method for reducing mismatch of semiconductor element patterns

A shell plate sound isolating structure is applied in a fan (), and includes a hollow plate body () having a front plate (), a rear plate () and an annular peripheral plate (), wherein the rear plate () has a first wind port () where the fan () is disposed, the front plate () or the annular peripheral plate () has at least one second wind port (); and at least one partition plate (), disposed inside the hollow plate body () and capable of fully blocking between the first wind port () and the at least one second wind port (), wherein a partition space (s) is formed between the at least one partition plate () and the hollow plate body () for forming an elongated flow channel (f) allowing the first wind port () and the second wind port () to be in communication.

Shell plate sound isolating structure

A uniformly luminous fan shield structure includes a light-transparent cover () and a light emitting diode (LED) module (). The light-transparent cover () includes a central area () and a ring () around the central area (). The ring () includes a groove (). A side surface of the groove () includes light guide structures (). The LED module () is accommodated in the groove (). The LED module () includes LEDs (), and each LED () illuminates toward each light guide structure () and the central area (), so as to achieve uniform luminosity of the light-transparent cover ().

Growing community of inventors

Taipei, Taiwan

Wei-Cheng Hung