Taiwan Semiconductor Manufacturing Comp. Ltd.

Microjet Technology Company, Ltd.

Wei-Chen Liao

Yen-Yu Chen

Wei-Jen Chen

Chang-Sheng Lee

Wei Zhang

Ming-Hsien Lin

Tsang-Yang Liu

Yi-Chen Chiang

Chi-Feng Huang

Yung-Lung Han

Hao-Jan Mou

Chun-Yu Chen

Kuo-Lung Hou

Yi-Cheng Huang

Ming-Che Chen

Shih-Wei Bih

Hung-Chun Hu

Young-Chih Kuo

Hsien-Chieh Hsiao

Jui-Yuan Chu

Wen-Tane Liao

Chien-Chih Huang

Hai-Lin Lee

Wen-Hsiung Liu

Ming Che Chen

Kuo-Lung Huo

Chi-Chiang Hsieh

A chamber for a physical vapor deposition (PVD) apparatus includes a collimator configured to narrow filter sputtered particles into a beam, an electrostatic chuck configured to support a substrate in the chamber, a shield and a chamber plate. The chamber plate includes a nut plate portion having a plurality of nut plates and a plurality of cavities in the chamber plate that are configured to allow gas to ingress and egress, wherein the cavities and nut plates are provided in equal numbers. The chamber is configured to operate at a target pressure, and the number of nut plates and corresponding number of cavities are determined based on the target pressure.

Physical vapor deposition apparatus

An apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.

Apparatus for preventing backside peeling defects on semiconductor wafers

A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

Device for adjusting position of chamber and plasma process chamber including the same for semiconductor manufacturing

A method of processing a semiconductor wafer is provided. The method includes installing upper lid. The installation of the upper lid includes placing an inlet manifold on a water box; inserting a jig into a lower gas channel in the water box and inserting into an upper gas channel in the inlet manifold; fastening the water box to the inlet manifold; and removing the jig after the water box engaging with the inlet manifold. The method also includes connecting a shower head on a lower side of the water box; and connecting the upper lid to a housing. The method further includes placing a semiconductor wafer into the housing. In addition, the method includes supplying a process gas over the semiconductor wafer through the upper gas channel, the lower gas channel and the shower head.

Semiconductor fabrication tool having gas manifold assembled by jig

A gas detecting device includes a casing, an optical mechanism, a gas transporting actuator, a laser module, a particle detector and an external sensing module. The casing includes a chamber, an inlet, an outlet and a communication channel. The optical mechanism is disposed in the chamber. The optical mechanism includes an airflow channel and a light-beam channel. The airflow channel is in fluid communication with the at least one inlet and the outlet. The light-beam channel is in communication with the airflow channel. The gas transporting actuator is disposed on the optical mechanism. The laser module is disposed in the optical mechanism for emitting a light beam to the airflow channel. The particle detector detects sizes and a concentration of the suspended particles in the air. The external sensing module is installed in the communication channel to measure the air.

Gas detecting device

A apparatus includes a susceptor and a non-reactive gas source. The susceptor has through holes and a wafer support surface. Each through hole includes a lift pin and a lift pin head. The lift pin has a vertical degree of motion in the through hole to lift up or place a wafer on the susceptor. The lift pin head has at least one flow channel structure running from its first surface at least partially exposed to a bottom side of the susceptor through its second surface exposed to a top side of the susceptor wherein the lift pin. The non-reactive gas source is configured to flow a gas to a backside of the wafer through the flow channel structure through the bottom side of the susceptor.

Apparatus and system for preventing backside peeling defects on semiconductor wafers

A physical vapor deposition (PVD) chamber, a process kit of a PVD chamber and a method of fabricating a process kit of a PVD chamber are provided. In various embodiments, the PVD chamber includes a sputtering target, a power supply, a process kit, and a substrate support. The sputtering target has a sputtering surface that is in contact with a process region. The power supply is electrically connected to the sputtering target. The process kit has an inner surface at least partially enclosing the process region, and a liner layer disposed on the inner surface. The substrate support has a substrate receiving surface, wherein the liner layer disposed on the inner surface of the process kit has a surface roughness (Rz), and the surface roughness (Rz) is substantially in a range of 50-200 &#x3bc;m.

Process kit of physical vapor deposition chamber and fabricating method thereof

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Nantou County, Taiwan

Wei-Chen Liao