Taiwan Semiconductor Manufacturing Comp. Ltd.

Wei-Chen Chu

Chia-Tien Wu

Tai-I Yang

Hsiang-Wei Liu

Hsin-Ping Chen

Shau-Lin Shue

Chung-Ju Lee

Yung-Hsu Wu

Cheng-Chi Chuang

Li-Lin Su

Chih-Wei Lu

Yung-Chih Wang

Tien-I Bao

Tien-Lu Lin

Pokuan Ho

Shin-Yi Yang

Chia-Wei Su

Yu-Chieh Liao

Chia-Chen Lee

A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a conductive line over the semiconductor substrate. The conductive line has a barrier region surrounding an inner portion of the conductive line, and the barrier region has a greater dopant concentration than the inner portion. The semiconductor device structure also includes a conductive via on the conductive line. The semiconductor device structure further includes a dielectric layer over the semiconductor substrate. The dielectric layer surrounds the conductive line and the conductive via.

Semiconductor device with self-aligned conductive features

A semiconductor device includes a conductive line and a conductive via contacting the conductive line. A first dielectric material contacts a first sidewall surface of the conductive via. A second dielectric material contacts a second sidewall surface of the conductive via. The first dielectric material includes a first material composition, and the second dielectric material includes a second material composition different than the first material composition.

Semiconductor device and method of manufacture

The present disclosure relates to an integrated chip that includes a substrate, a first metal line, and a hybrid metal line. The first metal line includes a first metal material and is within a first interlayer dielectric (ILD) layer over the substrate. The hybrid metal line is also within the first ILD layer. The hybrid metal line includes a pair of first metal segments that comprise the first metal material. The hybrid metal line further includes a second metal segment that comprises a second metal material that is different from the first metal material. The second metal segment is laterally between the pair of first metal segments.

Hybrid metal line structure

A semiconductor structure includes a substrate, a dielectric layer, a first conductive feature and a second conductive feature. The substrate includes a semiconductor device. The dielectric layer is disposed on the substrate. The first conductive feature is formed in the first dielectric layer. The second conductive feature penetrates the first conductive feature and the dielectric layer, and is electrically connected to the first conductive feature and the semiconductor device.

Semiconductor structure having deep metal line and method for forming the semiconductor structure

A semiconductor device and a method of operating the same are provided. The semiconductor device includes a transistor and a fuse structure electrically connected to the transistor. The fuse structure includes a first fuse element, a second fuse element, and a fuse medium. The second fuse element at least partially overlaps the first fuse element. The fuse medium connects the first fuse element and the second fuse element. The fuse medium includes an electrically conductive material.

Semiconductor device and method of operating the same

The present disclosure provides an interconnect structure, including a first metal line, a second metal line spaced away from the first metal line, a conductive contact over the first metal line, including a first portion, a second portion over the first portion, wherein a bottom width of the second portion is greater than a top width of the first portion, wherein a shortest distance between the second portion and the second metal line is in a range from 50 Angstrom to 200 Angstrom, and a third portion over the second portion, wherein a bottom width of the third portion is greater than a top width of the second portion, the entire first portion and the entire second portion are under a coverage of a vertical projection area of the third portion, a first layer, and a second layer over the first layer.

Interconnect structure and manufacturing method for the same

Photolithography overlay errors are a source of patterning defects, which contribute to low wafer yield. An interconnect formation process that employs a patterning photolithography/etch process with self-aligned interconnects is disclosed herein. The interconnection formation process, among other things, improves a photolithography overlay (OVL) margin since alignment is accomplished on a wider pattern. In addition, the patterning photolithography/etch process supports multi-metal gap fill and low-k dielectric formation with voids.

Multi-metal fill with self-aligned patterning and dielectric with voids

A method for forming a semiconductor device structure is provided. The method includes forming a conductive layer over a semiconductor substrate and forming a sacrificial layer over the conductive layer. The method also includes partially removing the sacrificial layer to form a first dummy element. The method further includes etching the conductive layer with the first dummy element as an etching mask to form a conductive line. In addition, the method includes partially removing the first dummy element to form a second dummy element over the conductive line. The method also includes forming a dielectric layer to surround the conductive line and the second dummy element and removing the second dummy element to form a via hole exposing the conductive line. The method further includes forming a conductive via in the via hole.

Method for forming semiconductor device with self-aligned conductive features

A semiconductor structure includes an integrated circuit, a first dielectric layer over the integrated circuit, an etch stop layer over the first dielectric layer, a barrier layer over the etch stop layer, a conductive layer over the barrier layer, and a void region vertically extending through the conductive layer, the barrier layer, and the etch stop layer. The void region has an upper portion, a middle portion below the upper portion, and a lower portion below the middle portion, the middle portion. The middle portion is narrower than the upper portion and the lower portion.

Semiconductor structure and method for manufacturing the same

The present disclosure provides an interconnect structure, including a first metal line, a conductive contact over the first metal line, including a first portion, a second portion over the first portion, wherein a bottom width of the second portion is greater than a top width of the first portion, and a third portion over the second portion, wherein a bottom width of the third portion is greater than a top width of the second portion, a sacrificial bilayer, including a first sacrificial layer, wherein a first portion of the first sacrificial layer is under a coverage of a vertical projection area of the first portion of the conductive contact, and a second sacrificial layer over the first sacrificial layer, and a dielectric layer over a top surface of the second sacrificial layer.

Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a conductive feature in a first dielectric layer. The semiconductor device structure also includes an etching stop layer over the first dielectric layer and a second dielectric layer over the etching stop layer. The semiconductor device structure further includes a conductive via in the etching stop layer and the second dielectric layer. In addition, the semiconductor device structure includes a conductive line over the conductive via. The semiconductor device structure also includes a first barrier liner covering the bottom surface of the conductive line. The semiconductor device structure further includes a second barrier liner surrounding sidewalls of the conductive line and the conductive via. The conductive line and the conductive via are confined in the first barrier liner and the second barrier liner.

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Taichung, Taiwan

Wei-Chen Chu