King Slide Works Co., Ltd.

King Slide Technology Co., Ltd.

Ememory Technology Inc.

Geckos Technology Corp.

Wei-Chen Chang

Ken-Ching Chen

Chun-Chiang Wang

Shun-Ho Yang

Tsung-Mu Lai

Shih-Chen Wang

Wen-Hao Ching

Chun-Yuan Lo

Chih-Hsin Chen

Tsung-Huan Sheng

Ping-Hung Chen

Chen-Yen Fan

Ching-Sung Yang

Chun-Yi Ho

Hsueh-Wei Chen

I-Lang Lin

Meng-Chiuan Wu

Ken-ching Chen

Chun-chiang Wang

A slide rail mechanism is provided and includes a supporting frame and a slide rail assembly. The supporting frame includes a disengaging feature. The slide rail assembly is movable with respect to the supporting frame. The slide rail assembly includes a first rail and a second rail. The second rail and the first rail displace synchronously during a displacement of the second rail with respect to the supporting frame away from a first predetermined position along a first predetermined direction. The disengaging feature of the supporting frame is configured to terminate a displacement synchronization between the second rail and the first rail when the second rail and the first rail are synchronously displaced to a second predetermined position along the first predetermined direction.

Slide rail mechanism

A slide rail mechanism is provided and includes a supporting member, a slide rail assembly and a rolling member. The slide rail assembly and the supporting member are displaceable relative to each other. The rolling member is arranged on one of the slide rail assembly and the supporting member. The slide rail assembly is configured to engage with the supporting member via the rolling member.

A slide rail assembly includes a first rail, a second rail, a working mechanism, an engaging member and an operating member. The second rail is movable relative to the first rail. The working mechanism and the engaging member are arranged on the second rail. When the second rail is moved to a predetermined position along a predetermined direction relative to the first rail, the working mechanism in a first state is configured to be blocked by a blocking feature of the first rail. When the operating member is moved from a first operating position to a second operating position, the working mechanism is driven to switch to a second state to be no longer blocked by the blocking feature. When the operating member is located at the second operating position, the operating member is engaged with the engaging member to be held at the second operation position.

Slide rail assembly and slide rail kit thereof

A slide rail assembly including a first rail, a second rail, a third rail, a first supporting device, and at least one supporting member is provided. The first rail includes a first end portion and a second end portion that are opposite to each other. The second rail is longitudinally movable relative to the first rail. The third rail is longitudinally movable relative to the second rail. The first supporting device exceeds the first end portion of the first rail for a predetermined longitudinal distance. The at least one supporting member is arranged on one of the second rail and the first supporting device.

Slide rail assembly

A slide rail mechanism includes a slide rail assembly and an auxiliary rail member. The slide rail assembly includes two slide rails. The auxiliary rail member is movably mounted to a first one of the two slide rails. When a second one of the two slide rails is detached from the first one of the two slide rails along an open direction, the auxiliary rail member is able to be moved from a retracted position to a predetermined extended position along the open direction relative to the first one of the two slide rails. The second one of the two slide rails is configured to carry a first carried object, and the auxiliary rail member is configured to carry a second carried object.

A slide rail assembly includes a first rail, a second rail, a slide-facilitating device, and a retaining member. The second rail is movably mounted in a channel of, and is longitudinally displaceable with respect to, the first rail. The slide-facilitating device is movably mounted between the rails and includes an engaging feature. The retaining member is provided on the first rail and includes an elastic portion with a predetermined feature. The first rail includes a limiting feature for preventing deformation of the elastic portion. When the second rail is moved out of the channel after displacement in an opening direction with respect to the first rail, the slide-facilitating device is at a predetermined position, with the engaging feature engaged with the predetermined feature.

A slide rail assembly includes a supporting frame, a first rail, a second rail and a third rail. The first rail is movable relative to the supporting frame. The second rail is movable relative to the first rail. The third rail is movable relative to the second rail. When the slide rail assembly is at an extending state, the first rail is located at a predetermined position relative to the supporting frame, the second rail is located at an extended position relative to the first rail, the third rail is located at an opened position relative to the second rail and a rear rail section of the third rail is overlapped with a front rail section of the first rail.

A slide rail assembly includes a supporting frame, a first rail, a second rail and a third rail. The first rail is movable relative to the supporting frame. The second rail is movable relative to the first rail. The third rail is movable relative to the second rail, and the second rail is movably mounted between the first rail and the third rail. The first rail can be moved to a second predetermined position from a first predetermined position in a retracting direction relative the supporting frame. The first rail can be retained at the second predetermined position so as to shorten a length of the slide rail assembly such that the third rail can be detached from the second rail easily in a limited environment.

A cell array structure includes a first resistive memory cell. The first resistive memory cell includes a well region, a first doped region, a merged region, a first gate structure, a second gate structure and a first metal layer. The first doped region is formed under a surface of the well region. The merged region is formed under the surface of the well region. The first gate structure is formed over the surface of the well region between the first doped region and the merged region. The first gate structure includes a first insulation layer and a first conductive layer. The second gate structure is formed over the merged region. The second gate structure includes a second insulation layer and a second conductive layer. The first metal layer is connected with the first doped region.

Resistive memory cell and associated cell array structure

A forming control method for a resistive random-access memory cell array is provided. While a forming action of the resistive random-access memory cell array is performed, a verification action is performed to judge whether the forming action on the resistive random-access memory cells has been successfully done. By properly changing a forming voltage or a pulse width, the forming actions on all of the resistive random-access memory cells of the resistive random-access memory cell array can be successfully done.

Forming control method applied to resistive random-access memory cell array

An antioxidant conductive thermal paste and a method of manufacturing the same are provided. The antioxidant conductive thermal paste includes a reactive monomer, a thermosetting resin, a polymerization inhibitor, an electrically conductive filler, and a thixotropic agent. The method consists of the steps of mixing a reactive monomer, a thermosetting resin, and a polymerization inhibitor evenly to get a first polymer mixture, and adding an electrically conductive filler and a thixotropic agent into the first polymer mixture in turn and blending the mixture evenly to obtain an antioxidant conductive thermal paste with good adherence, high electrical conductivity, high thermal conductivity, improved thermal-mechanical fatigue resistance or mechanical fatigue resistance.

Antioxidant conductive thermal paste and method of manufacturing the same

A slide rail assembly includes a first rail, a second rail, and an auxiliary member. The first rail includes a passage, and the passage includes a passage opening. The second rail is inserts in the passage from the passage opening through being guided by the auxiliary member.

A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.

High voltage switch device

A resistive random-access memory cell includes a well region, a first doped region, a second doped region, a third doped region, a first gate structure, a second gate structure and a third gate structure. The first gate structure is formed over the surface of the well region between the first doped region and the second doped region. The second gate structure is formed over the second doped region. The third gate structure is formed over the surface of the well region between the second doped region and the third doped region. A first metal layer is connected with the first doped region and the third doped region. A second metal layer is connected with the conductive layer of the first gate structure and the conductive layer of the third gate structure.

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Kaohsiung, Taiwan

Wei-Chen Chang